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Results: 1-25 |
Results: 25
A NEW METHOD FOR ELECTRON-DRIFT VELOCITY-MEASUREMENT USING FREQUENCY-RESPONSE ANALYSIS
Authors: TSURUGIDA K KOUZUMA K OTSUBO M IKUTA N
Citation: K. Tsurugida et al., A NEW METHOD FOR ELECTRON-DRIFT VELOCITY-MEASUREMENT USING FREQUENCY-RESPONSE ANALYSIS, Journal of the Physical Society of Japan, 67(3), 1998, pp. 858-862
MECHANISM FOR DESORPTION OF SIF4 FROM AN SIO2 FILM SURFACE IN HF SOLUTIONS
Authors: OKU T SATO K OTSUBO M
Citation: T. Oku et al., MECHANISM FOR DESORPTION OF SIF4 FROM AN SIO2 FILM SURFACE IN HF SOLUTIONS, JPN J A P 1, 36(3B), 1997, pp. 1374-1379
SELECTIVE WET ETCHING FOR HIGHLY UNIFORM GAAS AL0.15GA0.85AS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/
Authors: KITANO T IZUMI S MINAMI H ISHIKAWA T SATO K SONODA T OTSUBO M
Citation: T. Kitano et al., SELECTIVE WET ETCHING FOR HIGHLY UNIFORM GAAS AL0.15GA0.85AS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 167-170
HIGH-EFFICIENCY ALGAAS GAAS POWER HBTS AK A LOW SUPPLY VOLTAGE FOR DIGITAL CELLULAR PHONES/
Authors: SHIMURA T MIURA T UNEME Y NAKANO H HATTORI R OTSUBO M MORI K INOUE A TANINO N
Citation: T. Shimura et al., HIGH-EFFICIENCY ALGAAS GAAS POWER HBTS AK A LOW SUPPLY VOLTAGE FOR DIGITAL CELLULAR PHONES/, IEICE transactions on electronics, E80C(6), 1997, pp. 740-745
SELECTIVE-AREA CHEMICAL BEAM EPITAXIAL REGROWTH OF SI-DOPED GAAS BY USING SILICON TETRAIODIDE FOR FIELD-EFFECT TRANSISTOR APPLICATION
Authors: IZUMI S YAMAMOTO Y KUNII T MIYAKUNI S HAYAFUJI N SATO K OTSUBO M
Citation: S. Izumi et al., SELECTIVE-AREA CHEMICAL BEAM EPITAXIAL REGROWTH OF SI-DOPED GAAS BY USING SILICON TETRAIODIDE FOR FIELD-EFFECT TRANSISTOR APPLICATION, Journal of crystal growth, 175, 1997, pp. 404-410
AN ALGAAS INGAAS PSEUDOMORPHIC HEMT MODULATOR DRIVER IC WITH LOW-POWER DISSIPATION FOR 10-GB/S OPTICAL-TRANSMISSION SYSTEMS/
Authors: MIYASHITA M YOSHIDA N KOJIMA Y KITANO T HIGASHISAKA N NAKAGAWA J TAKAGI T OTSUBO M
Citation: M. Miyashita et al., AN ALGAAS INGAAS PSEUDOMORPHIC HEMT MODULATOR DRIVER IC WITH LOW-POWER DISSIPATION FOR 10-GB/S OPTICAL-TRANSMISSION SYSTEMS/, IEEE transactions on microwave theory and techniques, 45(7), 1997, pp. 1058-1064
HOLOGRAPHIC ATMOSPHERIC-TURBULENCE SIMULATOR FOR TESTING ADAPTIVE OPTICS SYSTEMS
Authors: OTSUBO M TAKAMI H IYE M
Citation: M. Otsubo et al., HOLOGRAPHIC ATMOSPHERIC-TURBULENCE SIMULATOR FOR TESTING ADAPTIVE OPTICS SYSTEMS, Publications of the Astronomical Society of the Pacific, 109(739), 1997, pp. 1057-1061
ACETIC-ACID FERMENTATION WITH QUINCE, ASP ARAGUS AND ALL THAT USING ISOLATED ACETIC-ACID BACTERIA
Authors: MIYAZAKI S OTSUBO M AOKI H SAWAYA T
Citation: S. Miyazaki et al., ACETIC-ACID FERMENTATION WITH QUINCE, ASP ARAGUS AND ALL THAT USING ISOLATED ACETIC-ACID BACTERIA, J JPN SOC F, 43(7), 1996, pp. 858-865
A MULTI PHASE-STATES MMIC PHASE-SHIFTER
Authors: NAKAHARA K CHAKI S ANDOH N MATSUOKA H TANINO N MITSUI Y OTSUBO M
Citation: K. Nakahara et al., A MULTI PHASE-STATES MMIC PHASE-SHIFTER, IEICE transactions on electronics, E79C(5), 1996, pp. 650-656
A NEW GAAS NEGATIVE VOLTAGE GENERATOR FOR A POWER-AMPLIFIER APPLIED TO A SINGLE-CHIP T R-MMIC FRONT-END/
Authors: YAMAMOTO K MAEMURA K KASAI N YOSHII Y MIYAZAKI Y NAKAYAMA M OGATA N TAKAGI T OTSUBO M
Citation: K. Yamamoto et al., A NEW GAAS NEGATIVE VOLTAGE GENERATOR FOR A POWER-AMPLIFIER APPLIED TO A SINGLE-CHIP T R-MMIC FRONT-END/, IEICE transactions on electronics, E79C(12), 1996, pp. 1741-1750
ADDITIONAL BILIARY DRAINAGE FOR THE PRIMARY HEPATOLITHIASIS - THE MERITS AND DEMERITS OF HEPATICOJEJUNOSTOMY
Authors: KUSANO T SHIRAISHI M OTSUBO M FURUKAWA M MUTO Y
Citation: T. Kusano et al., ADDITIONAL BILIARY DRAINAGE FOR THE PRIMARY HEPATOLITHIASIS - THE MERITS AND DEMERITS OF HEPATICOJEJUNOSTOMY, Hepatology, 24(4), 1996, pp. 1636-1636
A SINGLE-CHIP GAAS RF TRANSCEIVER FOR 1.9-GHZ DIGITAL MOBILE COMMUNICATION-SYSTEMS
Authors: YAMAMOTO K MAEMURA K KASAI N YOSHII Y MIYAZAKI Y NAKAYAMA M OGATA N TAKAGI T OTSUBO M
Citation: K. Yamamoto et al., A SINGLE-CHIP GAAS RF TRANSCEIVER FOR 1.9-GHZ DIGITAL MOBILE COMMUNICATION-SYSTEMS, IEEE journal of solid-state circuits, 31(12), 1996, pp. 1964-1973
EVALUATION OF MOLECULAR-BEAM EPITAXIALLY GROWN ALGAAS GAAS HETEROJUNCTIONS FOR BIPOLAR-TRANSISTOR WITH INGAAS EMITTER CONTACT LAYER/
Authors: IZUMI S SAKAI M SHIMURA T HAYAFUJI N SATO K OTSUBO M
Citation: S. Izumi et al., EVALUATION OF MOLECULAR-BEAM EPITAXIALLY GROWN ALGAAS GAAS HETEROJUNCTIONS FOR BIPOLAR-TRANSISTOR WITH INGAAS EMITTER CONTACT LAYER/, Applied physics letters, 69(17), 1996, pp. 2516-2518
CHEMICAL BEAM EPITAXIAL-GROWTH OF SI-DOPED GAAS AND INP BY USING SILICON TETRAIODIDE
Authors: IZUMI S HAYAFUJI N ITO K SATO K OTSUBO M
Citation: S. Izumi et al., CHEMICAL BEAM EPITAXIAL-GROWTH OF SI-DOPED GAAS AND INP BY USING SILICON TETRAIODIDE, Applied physics letters, 68(22), 1996, pp. 3102-3104
0.78- AND 0.98-MU-M RIDGE-WAVE-GUIDE LASERS BURIED WITH ALGAAS CONFINEMENT LAYER SELECTIVELY GROWN BY CHLORIDE-ASSISTED MOCVD
Authors: SHIMA A KIZUKI H TAKEMOTO A KARAKIDA S MIYASHITA M NAGAI Y KAMIZATO T SHIGIHARA K ADACHI A OMURA E OTSUBO M
Citation: A. Shima et al., 0.78- AND 0.98-MU-M RIDGE-WAVE-GUIDE LASERS BURIED WITH ALGAAS CONFINEMENT LAYER SELECTIVELY GROWN BY CHLORIDE-ASSISTED MOCVD, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 102-109
UNIFORM AND HIGH-POWER CHARACTERISTICS OF ALGAINP VISIBLE LASER-DIODES AND THEIR 4-ELEMENT ARRAYS FABRICATED ON A 3-INCH PHI-WAFER
Authors: SHIMA A KATO M NAGAI Y MOTODA T NISHIMURA T OMURA E OTSUBO M
Citation: A. Shima et al., UNIFORM AND HIGH-POWER CHARACTERISTICS OF ALGAINP VISIBLE LASER-DIODES AND THEIR 4-ELEMENT ARRAYS FABRICATED ON A 3-INCH PHI-WAFER, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 734-740
FABRICATION OF BROAD-AREA LASER-DIODES ON A 3-INCH WAFER BY A SOLID-PHASE DIFFUSION METHOD
Authors: NAGAI Y SHIGIHARA K SAITO H WATANABE H KARAKIDA S OTSUBO M IKEDA K
Citation: Y. Nagai et al., FABRICATION OF BROAD-AREA LASER-DIODES ON A 3-INCH WAFER BY A SOLID-PHASE DIFFUSION METHOD, IEEE photonics technology letters, 7(5), 1995, pp. 464-466
LARGE-AREA WAFER PROCESSING FOR 0.78-MU-M ALGAAS LASER-DIODES
Authors: NAGAI Y SHIBA T KUNITSUGU Y MIYASHITA M KARAKIDA S WATANABE H SHIMA A NAGAHAMA K OTSUBO M IKEDA K SUSAKI W
Citation: Y. Nagai et al., LARGE-AREA WAFER PROCESSING FOR 0.78-MU-M ALGAAS LASER-DIODES, IEEE photonics technology letters, 7(10), 1995, pp. 1101-1103
ESTIMATION OF STRAIN ARISING FROM THE ASSEMBLING PROCESS AND INFLUENCE OF ASSEMBLING MATERIALS ON PERFORMANCE OF LASER-DIODES
Authors: SHIGIHARA K NAGAI Y KARAKIDA S AIGA M OTSUBO M IKEDA K
Citation: K. Shigihara et al., ESTIMATION OF STRAIN ARISING FROM THE ASSEMBLING PROCESS AND INFLUENCE OF ASSEMBLING MATERIALS ON PERFORMANCE OF LASER-DIODES, Journal of applied physics, 78(3), 1995, pp. 1419-1423
CHARACTERISTICS OF LASER-DIODES WITH A PARTIALLY INTERMIXED GAAS-ALGAAS QUANTUM-WELL
Authors: NAGAI Y SHIGIHARA K KARAKIDA S KAKIMOTO S OTSUBO M IKEDA K
Citation: Y. Nagai et al., CHARACTERISTICS OF LASER-DIODES WITH A PARTIALLY INTERMIXED GAAS-ALGAAS QUANTUM-WELL, IEEE journal of quantum electronics, 31(8), 1995, pp. 1364-1370
LOW DAMAGE ETCHING OF INGAAS ALGAAS BY THE ELECTRON-CYCLOTRON-RESONANCE PLASMA WITH CL2/HE MIXTURE FOR HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: MIYAKUNI S SAKAI M HATTORI R IZUMI S SHIMURA T SATO K TAKANO H OTSUBO M
Citation: S. Miyakuni et al., LOW DAMAGE ETCHING OF INGAAS ALGAAS BY THE ELECTRON-CYCLOTRON-RESONANCE PLASMA WITH CL2/HE MIXTURE FOR HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 530-535
MEASUREMENT OF LARGE PLANE SURFACE SHAPES BY CONNECTING SMALL-APERTURE INTERFEROGRAMS
Authors: OTSUBO M OKADA K TSUJIUCHI J
Citation: M. Otsubo et al., MEASUREMENT OF LARGE PLANE SURFACE SHAPES BY CONNECTING SMALL-APERTURE INTERFEROGRAMS, Optical engineering, 33(2), 1994, pp. 608-613
10000H, 30-50 MWW CW OPERATION OF 670-690 NM VISIBLE LASER-DIODES
Authors: SHIMA A WATANABE H TADA H ARIMOTO S KAMIZATO T KADOIWA K OMURA E OTSUBO M
Citation: A. Shima et al., 10000H, 30-50 MWW CW OPERATION OF 670-690 NM VISIBLE LASER-DIODES, Electronics Letters, 30(16), 1994, pp. 1293-1294
FOCUSED ION-BEAM TRIMMING TECHNIQUES FOR MMIC CIRCUIT OPTIMIZATION
Authors: ISHIKAWA T KOMARU M ITOH K KOSAKI K MITSUI Y OTSUBO M MITSUI S
Citation: T. Ishikawa et al., FOCUSED ION-BEAM TRIMMING TECHNIQUES FOR MMIC CIRCUIT OPTIMIZATION, IEICE transactions on electronics, E76C(6), 1993, pp. 891-900
STUDY ON THE ACCUMULATED IMPURITIES AT THE EPILAYER SUBSTRATE INTERFACE AND THEIR INFLUENCE ON THE LEAKAGE CURRENT OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
Authors: IZUMI S YOSHIDA N TAKANO H NISHITANI K OTSUBO M
Citation: S. Izumi et al., STUDY ON THE ACCUMULATED IMPURITIES AT THE EPILAYER SUBSTRATE INTERFACE AND THEIR INFLUENCE ON THE LEAKAGE CURRENT OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of crystal growth, 133(1-2), 1993, pp. 123-131
Risultati: 1-25 |