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Results: 1-3 |
Results: 3
WALK-OUT PHENOMENA IN 6H-SIC MESA DIODES WITH SIO2 SI3N4 PASSIVATION AND CHARGE TRAPPING IN DRY AND WET OXIDES ON N-TYPE 6H-SIC/
Authors: BAKOWSKI M GUSTAFSSON U OVUKA Z
Citation: M. Bakowski et al., WALK-OUT PHENOMENA IN 6H-SIC MESA DIODES WITH SIO2 SI3N4 PASSIVATION AND CHARGE TRAPPING IN DRY AND WET OXIDES ON N-TYPE 6H-SIC/, Microelectronics and reliability, 38(3), 1998, pp. 381-392
INVESTIGATION WALK-OUT PHENOMENA IN SIC MESA DIODES WITH SIO2 SI3N4 PASSIVATION/
Authors: OVUKA Z BAKOWSKI M
Citation: Z. Ovuka et M. Bakowski, INVESTIGATION WALK-OUT PHENOMENA IN SIC MESA DIODES WITH SIO2 SI3N4 PASSIVATION/, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1476-1479
OXIDE THICKNESS-DEPENDENCE AND BIAS-DEPENDENCE OF POSTMETALLIZATION ANNEALING OF INTERFACE STATES IN METAL-OXIDE-SILICON DIODES
Authors: RAGNARSSON LA LUNDGREN P OVUKA Z ANDERSSON MO
Citation: La. Ragnarsson et al., OXIDE THICKNESS-DEPENDENCE AND BIAS-DEPENDENCE OF POSTMETALLIZATION ANNEALING OF INTERFACE STATES IN METAL-OXIDE-SILICON DIODES, Journal of the Electrochemical Society, 144(5), 1997, pp. 1866-1869
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