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Results:
1-17
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Results: 17
Authors:
Crolly, G
Oechsner, H
Citation: G. Crolly et H. Oechsner, Comparative determination of the electron temperature in Ar- and N-2-plasmas with electrostatic probes, optical emission spectroscopy OES and energy dispersive mass spectrometry EDMS, EPJ-APPL PH, 15(1), 2001, pp. 49-56
Authors:
Ye, J
Oechsner, H
Westermeyr, S
Citation: J. Ye et al., Effect of substrate temperature and ion bombardment on the formation of cubic boron nitride films: A two-step deposition approach, J VAC SCI A, 19(5), 2001, pp. 2294-2300
Authors:
Bieck, W
Merz, E
Gnaser, H
Oechsner, H
Citation: W. Bieck et al., Theoretical and experimental characterization of a low-pressure rf plasma and its optimization in electron-gas secondary-neutral mass spectrometry, J VAC SCI A, 19(1), 2001, pp. 108-117
Authors:
Oechsner, H
Westermeyr, S
Ye, J
Citation: H. Oechsner et al., Characterization of sputter deposited cBN-films by low energy electron loss spectroscopy LEELS, APPL SURF S, 179(1-4), 2001, pp. 88-94
Authors:
Dusane, RO
Bauer, S
Schroder, B
Oechsner, H
Citation: Ro. Dusane et al., Is the nucleation and coalescence behavior in the growth of a-Si : H filmsprepared by the CAT-CVD different?, THIN SOL FI, 395(1-2), 2001, pp. 121-124
Authors:
Rothhaar, U
Oechsner, H
Scheib, M
Muller, R
Citation: U. Rothhaar et al., Compositional and structural characterization of temperature-induced solid-state reactions in Al/Ni multilayers, PHYS REV B, 61(2), 2000, pp. 974-979
On the formation of concentration profiles by low-energy ion bombardment and sputter depth profiling
Authors:
Cao, ZX
Oechsner, H
Citation: Zx. Cao et H. Oechsner, On the formation of concentration profiles by low-energy ion bombardment and sputter depth profiling, NUCL INST B, 170(1-2), 2000, pp. 53-61
Authors:
Cao, ZX
Oechsner, H
Citation: Zx. Cao et H. Oechsner, Concentration microprofiles in iron silicides induced by low energy Ar+ ion bombardment, NUCL INST B, 168(2), 2000, pp. 192-202
Authors:
Oechsner, H
Bock, W
Kopnarski, M
Muller, M
Citation: H. Oechsner et al., INA-X: An advanced instrument for electron-gas SNMS, MIKROCH ACT, 133(1-4), 2000, pp. 69-73
Authors:
Oechsner, H
Gnaser, H
Citation: H. Oechsner et H. Gnaser, 10th Working Conference on Applied Surface Analysis (AOFA 10) Kaiserslautern, 6-10 September 1998, FRESEN J AN, 365(1-3), 1999, pp. 1-2
Authors:
Woll, DM
Wahl, M
Oechsner, H
Citation: Dm. Woll et al., Operation and application of a laser mass analyser (LASMA) for multielement analysis, FRESEN J AN, 365(1-3), 1999, pp. 70-75
Authors:
Getto, R
Freytag, J
Kopnarski, M
Oechsner, H
Citation: R. Getto et al., Characterization of sputtered titanium silicide ohmic contacts on n-type 6H-silicon carbide, MAT SCI E B, 61-2, 1999, pp. 270-274
Authors:
Oechsner, H
Muller, M
Citation: H. Oechsner et M. Muller, INA-X: A novel instrument for electron-gas secondary neutral mass spectrometry with optional in situ x-ray photoelectron spectroscopy, J VAC SCI A, 17(6), 1999, pp. 3401-3405
Authors:
Ulrich, S
Kratzsch, A
Leiste, H
Stuber, M
Schlossmacher, P
Holleck, H
Binder, J
Schild, D
Westermeyer, S
Becker, P
Oechsner, H
Citation: S. Ulrich et al., Variation of carbon concentration, ion energy, and ion current density of magnetron-sputtered boron carbonitride films, SURF COAT, 119, 1999, pp. 742-750
Authors:
Weber, FR
Oechsner, H
Citation: Fr. Weber et H. Oechsner, Low-energy plasma beam deposition of carbon nitride layers with beta-C3N4-like fractions, THIN SOL FI, 356, 1999, pp. 73-78
Authors:
Oechsner, H
Scheib, M
Goebel, H
Citation: H. Oechsner et al., ECWR-plasma CVD as a novel technique for phase controlled deposition of semiconductor films, THIN SOL FI, 341(1-2), 1999, pp. 101-104
Authors:
Oechsner, H
Citation: H. Oechsner, Analysis of electrically non-conducting sample structures with electron and mass spectroscopic methods, THIN SOL FI, 341(1-2), 1999, pp. 105-108
Risultati:
1-17
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