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Citation: A. Yamaguchi et al., Dissolution rate analysis of ArF resists based on the percolation model, JPN J A P 1, 38(7A), 1999, pp. 4033-4040

Authors: Kanzaki, K Ohfuji, T Sasago, M Tagawa, S

Citation: K. Kanzaki et al., Atomic force microscopy study on the dissolution processes of chemically amplified resists for KrF excimer laser lithography, JPN J A P 1, 38(5A), 1999, pp. 2997-3000

Authors: Takahashi, M Kishimura, S Ohfuji, T Sasago, M

Citation: M. Takahashi et al., Challenges to 0.1 mu m resolution capability in ArF single layer resist process with weak resolution enhancement techniques, JPN J A P 1, 37(12B), 1998, pp. 6723-6728

Authors: Kishimura, S Takahashi, M Ohfuji, T Sasago, M

Citation: S. Kishimura et al., Study of the bottom antireflective coating process using a high-transparency resist for ArF excimer laser lithography, JPN J A P 1, 37(12B), 1998, pp. 6729-6733

Authors: Kanzaki, K Ohfuji, T Sasago, M Tagawa, S

Citation: K. Kanzaki et al., Nonhomogeneous pattern formation in the dissolution processes of novolak-diazonaphthoquinone resists, JPN J A P 1, 37(11), 1998, pp. 6266-6269