Authors: Washio, K Ohue, E Oda, K Hayami, R Tanabe, M Shimamoto, H Masuda, T Ohhata, K Kondo, M

Citation: K. Washio et al., Self-aligned selective-epitaxial-growth SiGeHBTs: process, device, and ICs, THIN SOL FI, 369(1-2), 2000, pp. 352-357

Authors: Nambu, H Kanetani, K Yamasaki, K Higeta, K Usami, M Nishiyama, M Ohhata, K Arakawa, F Kusunoki, T Yamaguchi, K Hotta, A Homma, N

Citation: H. Nambu et al., A 550-ps access 900-MHz 1-Mb ECL-CMOS SRAM, IEEE J SOLI, 35(8), 2000, pp. 1159-1168

Authors: Ohhata, K Arakawa, F Kusunoki, T Nambu, H Kanetani, K Yamasaki, K Higeta, K Usami, M Nishiyama, M Yamaguchi, K Homma, N Hotta, A

Citation: K. Ohhata et al., Power reduction techniques for a 1-Mb ECL-CMOS SRAM with an access time of550 ps acid an operating frequency of 900 MHz, IEEE J SOLI, 35(4), 2000, pp. 564-571

Authors: Ohhata, K Masuda, T Ohue, E Washio, K

Citation: K. Ohhata et al., Design of a 32.7-GHz bandwidth AGC amplifier IC with wide dynamic range implemented in SiGeHBT, IEEE J SOLI, 34(9), 1999, pp. 1290-1297

Authors: Ohhata, K Masuda, T Imai, K Takeyari, R Washio, K

Citation: K. Ohhata et al., A wide-dynamic-range, high-transimpedance Si bipolar preamplifier IC for 10-Gb/s optical fiber links, IEEE J SOLI, 34(1), 1999, pp. 18-24