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Results: 1-2 |
Results: 2
The effect of surface oxidation status on 0.35-mu m HIGFET characteristics
Authors: Ohshika, K Kuroda, J Yanazawa, H
Citation: K. Ohshika et al., The effect of surface oxidation status on 0.35-mu m HIGFET characteristics, ELEC C JP 2, 84(7), 2001, pp. 46-57
Material analysis on degradation phenomena caused by hot carrier in 0.35 mu m WSi gate GaAs heterostructure insulated gate field effect transistors
Authors: Ohshika, K Yamashita, T Fukui, M Yanazawa, H Takatani, S Matsumoto, H
Citation: K. Ohshika et al., Material analysis on degradation phenomena caused by hot carrier in 0.35 mu m WSi gate GaAs heterostructure insulated gate field effect transistors, J ELCHEM SO, 148(5), 2001, pp. G249-G253
Risultati: 1-2 |