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Citation: K. Maekawa et al., Fabrication of metal-bonded grinding/polishing tools by greentape laser sintering method, KEY ENG MAT, 196, 2001, pp. 133-140

Authors: Shimada, H Ohshima, I Ushiki, T Sugawa, S Ohmi, T

Citation: H. Shimada et al., Tantalum nitride metal gate FD-SOI CMOS FETs using low resistivity self-grown bcc-tantalum layer, IEEE DEVICE, 48(8), 2001, pp. 1619-1626

Authors: Ushiki, T Kawai, K Ohshima, I Ohmi, T

Citation: T. Ushiki et al., Chemical reaction concerns of gate metal with gate dielectric in Ta gate MOS devices: An effect of self-sealing barrier configuration interposed between Ta and SiO2, IEEE DEVICE, 47(11), 2000, pp. 2201-2207

Authors: Shioiri, T Honma, M Miyagawa, M Kaneko, E Ohshima, I

Citation: T. Shioiri et al., Insulation characteristics of vacuum interrupter for a new 72/84 kV C-GIS, IEEE DIELEC, 6(4), 1999, pp. 486-490

Authors: Ohshima, I Maekawa, K

Citation: I. Ohshima et K. Maekawa, Characteristics of drill damage and hole quality in microdrilling of printed circuit boards, INT J JPN P, 33(2), 1999, pp. 94-99

Authors: Homma, M Somei, H Niwa, Y Yokokura, K Ohshima, I

Citation: M. Homma et al., Physical and theoretical aspects of a new vacuum arc control technology-self are diffusion by electrode: SADE, IEEE PLAS S, 27(4), 1999, pp. 961-968