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Results: 1-9 |
Results: 9
67-GHz static frequency divider using 0.2-mu m self-aligned SiGeHBTs
Authors: Washio, K Hayami, R Ohue, E Oda, K Tanabe, M Shimamoto, H Kondo, M
Citation: K. Washio et al., 67-GHz static frequency divider using 0.2-mu m self-aligned SiGeHBTs, IEEE MICR T, 49(1), 2001, pp. 3-8
A 0.2-mu m self-aligned selective-epitaxial-growth SiGeHBT featuring 107-GHz f(max) and 6.7-ps ECL
Authors: Washio, K Kondo, M Ohue, E Oda, K Hayami, R Tanabe, M Shimamoto, H Harada, T
Citation: K. Washio et al., A 0.2-mu m self-aligned selective-epitaxial-growth SiGeHBT featuring 107-GHz f(max) and 6.7-ps ECL, IEEE DEVICE, 48(9), 2001, pp. 1989-1994
A 50-GHz static frequency divider and 40-Gb/s MUX/DEMUX using self-alignedselective-epitaxial-growth SiGeHBTs with 8-ps ECE
Authors: Washio, K Ohue, E Oda, K Hayami, R Tanabe, M Shimamoto, H
Citation: K. Washio et al., A 50-GHz static frequency divider and 40-Gb/s MUX/DEMUX using self-alignedselective-epitaxial-growth SiGeHBTs with 8-ps ECE, IEEE DEVICE, 48(7), 2001, pp. 1482-1487
Self-aligned selective-epitaxial-growth SiGeHBTs: process, device, and ICs
Authors: Washio, K Ohue, E Oda, K Hayami, R Tanabe, M Shimamoto, H Masuda, T Ohhata, K Kondo, M
Citation: K. Washio et al., Self-aligned selective-epitaxial-growth SiGeHBTs: process, device, and ICs, THIN SOL FI, 369(1-2), 2000, pp. 352-357
Si1-xGex selective epitaxial growth for ultra-high-speed self-aligned HBTs
Authors: Oda, K Ohue, E Tanabe, M Shimamoto, H Washio, K
Citation: K. Oda et al., Si1-xGex selective epitaxial growth for ultra-high-speed self-aligned HBTs, THIN SOL FI, 369(1-2), 2000, pp. 358-361
High-frequency, low-noise Si bipolar transistor fabricated using self-aligned metal/IDP technology
Authors: Shimamoto, H Onai, T Ohue, E Tanabe, M Washio, K
Citation: H. Shimamoto et al., High-frequency, low-noise Si bipolar transistor fabricated using self-aligned metal/IDP technology, IEICE TR EL, E82C(11), 1999, pp. 2007-2012
DC and AC performances in selectively grown SiGe-base HBTs
Authors: Oda, K Ohue, E Tanabe, M Shimamoto, H Washio, K
Citation: K. Oda et al., DC and AC performances in selectively grown SiGe-base HBTs, IEICE TR EL, E82C(11), 1999, pp. 2013-2020
A selective-epitaxial-growth SiGe-base HBT with SMI electrodes featuring 9.3-ps ECL-gate delay
Authors: Washio, K Ohue, E Oda, K Tanabe, M Shimamoto, H Onai, T Kondo, M
Citation: K. Washio et al., A selective-epitaxial-growth SiGe-base HBT with SMI electrodes featuring 9.3-ps ECL-gate delay, IEEE DEVICE, 46(7), 1999, pp. 1411-1416
Design of a 32.7-GHz bandwidth AGC amplifier IC with wide dynamic range implemented in SiGeHBT
Authors: Ohhata, K Masuda, T Ohue, E Washio, K
Citation: K. Ohhata et al., Design of a 32.7-GHz bandwidth AGC amplifier IC with wide dynamic range implemented in SiGeHBT, IEEE J SOLI, 34(9), 1999, pp. 1290-1297
Risultati: 1-9 |