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Results: 1-8 |
Results: 8
The stabilization of a positron lifetime spectrometer with a high-accuracytime reference
Authors: Nissila, J Karppinen, M Rytsola, K Oila, J Saarinen, K Hautojarvi, P
Citation: J. Nissila et al., The stabilization of a positron lifetime spectrometer with a high-accuracytime reference, NUCL INST A, 466(3), 2001, pp. 527-537
Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers - art. no. 045205
Authors: Oila, J Ranki, V Kivioja, J Saarinen, K Hautojarvi, P Likonen, J Baranowski, JM Pakula, K Suski, T Leszczynski, M Grzegory, I
Citation: J. Oila et al., Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers - art. no. 045205, PHYS REV B, 6304(4), 2001, pp. 5205
Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation
Authors: Desgardin, P Oila, J Saarinen, K Hautojarvi, P Tournie, E Faurie, JP Corbel, C
Citation: P. Desgardin et al., Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation, PHYS REV B, 62(23), 2000, pp. 15711-15717
Study of the effects of Mg and Be co-doping in GaN layers
Authors: Naranjo, FB Sanchez-Garcia, MA Pau, JL Jimenez, A Calleja, E Munoz, E Oila, J Saarinen, K Hautojarvi, P
Citation: Fb. Naranjo et al., Study of the effects of Mg and Be co-doping in GaN layers, PHYS ST S-A, 180(1), 2000, pp. 97-102
Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals
Authors: Saarinen, K Nissila, J Oila, J Ranki, V Hakala, M Puska, MJ Hautojarvi, P Likonen, J Suski, T Grzegory, I Lucznik, B Porowski, S
Citation: K. Saarinen et al., Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals, PHYSICA B, 274, 1999, pp. 33-38
The deactivation of nitrogen accepters in ZnSxSe1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements
Authors: Oila, J Saarinen, K Laine, T Hautojarvi, P Uusimaa, P Pessa, M Likonen, J
Citation: J. Oila et al., The deactivation of nitrogen accepters in ZnSxSe1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements, PHYSICA B, 274, 1999, pp. 902-906
Sample illumination facility for slow positron beam studies and its application to the photoionization cross-section of the DX center in AlxGa1-xAs
Authors: Oila, J Laine, T Nissila, J Fallstrom, K Saarinen, K Hautojaarvi, P
Citation: J. Oila et al., Sample illumination facility for slow positron beam studies and its application to the photoionization cross-section of the DX center in AlxGa1-xAs, APPL SURF S, 149(1-4), 1999, pp. 77-81
Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnS0.06Se0.94
Authors: Oila, J Saarinen, K Laine, T Hautojarvi, P Uusimaa, P Pessa, M Likonen, J
Citation: J. Oila et al., Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnS0.06Se0.94, PHYS REV B, 59(20), 1999, pp. R12736-R12739
Risultati: 1-8 |