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Results:
1-7
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Results: 7
Authors:
Giazotto, F
Pingue, P
Beltram, F
Lazzarino, M
Orani, D
Rubini, S
Franciosi, A
Citation: F. Giazotto et al., Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model - art. no. 216808, PHYS REV L, 8721(21), 2001, pp. 6808
Authors:
Bonanni, B
Orani, D
Lazzarino, M
Rubini, S
Franciosi, A
Citation: B. Bonanni et al., Metal/III-V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles, APPL PHYS L, 79(10), 2001, pp. 1462-1464
Authors:
Bonanni, B
Pelucchi, E
Rubini, S
Orani, D
Franciosi, A
Garulli, A
Parisini, A
Citation: B. Bonanni et al., Excitonic properties and band alignment in lattice-matched ZnCdSe/ZnMgSe multiple-quantum-well structures, APPL PHYS L, 78(4), 2001, pp. 434-436
Authors:
Giazotto, F
Cecchini, M
Pingue, P
Beltram, F
Lazzarino, M
Orani, D
Rubini, S
Franciosi, A
Citation: F. Giazotto et al., Reflectionless tunneling in planar Nb/GaAs hybrid junctions, APPL PHYS L, 78(12), 2001, pp. 1772-1774
Authors:
Marinelli, C
Sorba, L
Lazzarino, M
Kumar, D
Pelucchi, E
Muller, BH
Orani, D
Rubini, S
Franciosi, A
De Franceshi, S
Beltran, F
Citation: C. Marinelli et al., Tunable Schottky barrier contacts to InxGa1-xAs, J VAC SCI B, 18(4), 2000, pp. 2119-2127
Authors:
Quagliano, LG
Sobiesierski, Z
Orani, D
Ricci, A
Citation: Lg. Quagliano et al., Phonon study of temperature evolution of strain in GaAs/Si(001) and GaAs/Si(111) heterostructures, PHYSICA B, 263, 1999, pp. 775-778
Authors:
Marinelli, C
Sorba, L
Muller, BH
Kumar, D
Orani, D
Rubini, S
Franciosi, A
De Franceschi, S
Lazzarino, M
Beltram, F
Citation: C. Marinelli et al., Ohmic versus rectifying contacts through interfacial dipoles: Al/InxGa1-xAs, J CRYST GR, 202, 1999, pp. 769-772
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1-7
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