Authors:
Santucci, S
Lozzi, L
Maccallini, E
Passacantando, M
Ottaviano, L
Cantalini, C
Citation: S. Santucci et al., Oxygen loss and recovering induced by ultrahigh vacuum and oxygen annealing on WO3 thin film surfaces: Influences on the gas response properties, J VAC SCI A, 19(4), 2001, pp. 1467-1473
Authors:
Ottaviano, L
Melechko, AV
Santucci, S
Plummer, EW
Citation: L. Ottaviano et al., A variable temperature scanning tunnelling microscopy study of the electronic response of the Sn/Si(111) alpha surface to extrinsic defects, PHYS LOW-D, 3-4, 2001, pp. 189-197
Authors:
Lozzi, L
Ottaviano, L
Passacantando, M
Santucci, S
Cantalini, C
Citation: L. Lozzi et al., The influence of air and vacuum thermal treatments on the NO2 gas sensitivity of WO3 thin films prepared by thermal evaporation, THIN SOL FI, 391(2), 2001, pp. 224-228
Citation: L. Ottaviano et al., Visualisation of the preferential adsorption sites of oxygen onto WO3 nano-particles, SURF SCI, 492(1-2), 2001, pp. L700-L704
Authors:
Ottaviano, L
Lozzi, L
Passacantando, M
Santucci, S
Citation: L. Ottaviano et al., On the spatially resolved electronic structure of polycrystalline WO3 films investigated with scanning tunneling spectroscopy, SURF SCI, 475(1-3), 2001, pp. 73-82
Citation: L. Lozzi et al., High resolution XPS studies on hexadecafluoro-copper-phthalocyanine deposited onto Si(111)7 x 7 surface, SURF SCI, 470(3), 2001, pp. 265-274
Authors:
Ottaviano, L
Crivellari, M
Profeta, G
Continenza, A
Lozzi, L
Santucci, S
Citation: L. Ottaviano et al., Origin, symmetry, and temperature dependence of the perturbation induced by Si extrinsic defects on the Sn/Si(111) alpha surface: A scanning tunneling microscopy study, J VAC SCI A, 18(4), 2000, pp. 1946-1949
Authors:
Santucci, S
Cantalini, C
Crivellari, M
Lozzi, L
Ottaviano, L
Passacantando, M
Citation: S. Santucci et al., X-ray photoemission spectroscopy and scanning tunneling spectroscopy studyon the thermal stability of WO3 thin films, J VAC SCI A, 18(4), 2000, pp. 1077-1082
Authors:
Profeta, G
Continenza, A
Ottaviano, L
Mannstadt, W
Freeman, AJ
Citation: G. Profeta et al., Structural and electronic properties of the Sn/Si(111)root 3x root 3R30 degrees surface, PHYS REV B, 62(3), 2000, pp. 1556-1559
Authors:
Ottaviano, L
Profeta, G
Continenza, A
Santucci, S
Freeman, AJ
Modesti, S
Citation: L. Ottaviano et al., Defect-induced perturbation on the 1/3 ML Sn-Si(111) surface: a voltage-dependent scanning tunneling microscopy study, SURF SCI, 464(2-3), 2000, pp. 57-67
Authors:
Ottaviano, L
Lozzi, L
Ramondo, F
Picozzi, P
Santucci, S
Citation: L. Ottaviano et al., Copper hexadecafluoro phthalocyanine and naphthalocyanine: The role of shake up excitations in the interpretation and electronic distinction of high-resolution X-ray photoelectron spectroscopy measurements, J ELEC SPEC, 105(2-3), 1999, pp. 145-154
Authors:
Ottaviano, L
Lozzi, L
Montefusco, A
Santucci, S
Citation: L. Ottaviano et al., Naphthalocyanine molecules onto Si(111)7x7 and Si(100)2x1: modes of adsorption investigated with XPS, SURF SCI, 443(3), 1999, pp. 227-237
Authors:
Lozzi, L
Ottaviano, L
Rispoli, F
Picozzi, P
Santucci, S
Citation: L. Lozzi et al., X-ray photoelectron spectroscopy studies on hexadecafluoro-copper-phthalocyanine ultrathin films deposited onto Si(100) 2 x 1, SURF SCI, 435, 1999, pp. 157-161
Citation: L. Ottaviano et al., Interaction of naphthalocyanine with oxygen and with Si(111) 7x7: an in-situ X-ray photoelectron spectroscopy study, SURF SCI, 431(1-3), 1999, pp. 242-251