Authors: Quittard, O Joffre, F Brisset, C Oudea, C Saigne, F Dusseau, L Fesquet, J Gasiot, J

Citation: O. Quittard et al., Use of the radiation-induced charge neutralization mechanism to achieve annealing of 0.35 mu m SRAMs, IEEE NUCL S, 46(6), 1999, pp. 1633-1639