Authors:
VALTUENA JF
SACEDON A
ALVAREZ AL
IZPURA I
CALLE F
CALLEJA E
MACPHERSON G
GOODHEW PJ
PACHECO FJ
GARCIA R
MOLINA SI
Citation: Jf. Valtuena et al., INFLUENCE OF THE SURFACE-MORPHOLOGY ON THE RELAXATION OF LOW-STRAINEDINXGA1-XAS LINEAR BUFFER STRUCTURES, Journal of crystal growth, 182(3-4), 1997, pp. 281-291
Authors:
KIDD P
DUNSTAN DJ
COLSON HG
LOURENCO MA
SACEDON A
GONZALEZSANZ F
GONZALEZ L
GONZALEZ Y
GARCIA R
GONZALEZ D
PACHECO FJ
GOODHEW PJ
Citation: P. Kidd et al., COMPARISON OF THE CRYSTALLINE QUALITY OF STEP-GRADED AND CONTINUOUSLYGRADED INGAAS BUFFER LAYERS, Journal of crystal growth, 169(4), 1996, pp. 649-659
Authors:
ARAGON G
MOLINA SI
PACHECO FJ
GONZALEZ Y
GONZALEZ L
BRIONES F
GARCIA R
Citation: G. Aragon et al., A STUDY OF THE DEFECT STRUCTURE IN GAAS-LAYERS GROWN AT LOW AND HIGH-TEMPERATURES ON SI(001) SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 196-199