Authors: PADALKO AG SHEVCHENKO VY PASHKOVA ON STEBLEVSKII AV

Citation: Ag. Padalko et al., CARRIER LIFETIME IN DIRECTIONALLY SOLIDIFIED P-INSB[GE] THIN-LAYERS ON AL2O3 IN THE RANGE 77-300 K, Inorganic materials, 33(8), 1997, pp. 776-780

Authors: PADALKO AG PASHKOVA ON SHEVCHENKO VY STEBLEVSKII AV

Citation: Ag. Padalko et al., ELECTRIC AND PHOTOELECTRIC PROPERTIES OF DOPED INSB AL2O3 THIN-LAYERSAT 300-K/, Inorganic materials, 32(4), 1996, pp. 355-360

Authors: PADALKO AG PERRY FS LAZAREV VB

Citation: Ag. Padalko et al., PHOTOELECTRIC PROPERTIES OF UNCOOLED INDIUM-ANTIMONIDE THIN-LAYER DETECTORS, Inorganic materials, 30(2), 1994, pp. 150-156

Authors: SHAROVATOV AI MIKHAILOVA AY SANYGIN VP PADALKO AG LAZAREV VB

Citation: Ai. Sharovatov et al., INVESTIGATION OF ORIENTED SILICON FILMS OBTAINED BY VAPOR-PHASE DEPOSITION, Inorganic materials, 29(5), 1993, pp. 671-674