CARRIER LIFETIME IN DIRECTIONALLY SOLIDIFIED P-INSB[GE] THIN-LAYERS ON AL2O3 IN THE RANGE 77-300 K

Authors
PADALKO AG SHEVCHENKO VY PASHKOVA ON STEBLEVSKII AV
Citation
Ag. Padalko et al., CARRIER LIFETIME IN DIRECTIONALLY SOLIDIFIED P-INSB[GE] THIN-LAYERS ON AL2O3 IN THE RANGE 77-300 K, Inorganic materials, 33(8), 1997, pp. 776-780
Citations number
10
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
33
Issue
8
Year of publication
1997
Pages
776 - 780
Database
ISI
SICI code
0020-1685(1997)33:8<776:CLIDSP>2.0.ZU;2-B
Abstract
The electric and photoelectric properties of Ge-doped InSb layers prep ared by directional solidification on sapphire substrates were studied in the temperature range 77-300 K. The temperature dependences of the Hall coefficient, carrier mobility, and peak voltage responsivity of the layers with carrier concentrations in the range (0.5-3.5) x 10(16) cm(-3) are presented. The observed effective carrier lifetime and the estimated lifetimes of electrons and holes are shorter than those rep orted for bulk crystals, in accordance with the high dislocation densi ty, of order 5 x 10(5) cm(-2), in the layers.