Citation: Ma. Dzhafarov, NEGATIVE PHOTOCONDUCTIVITY IN CD1-XZNXS FILMS PREPARED BY PRECIPITATION FROM AQUEOUS-SOLUTIONS, Inorganic materials, 34(9), 1998, pp. 860-862
Citation: S. Vackova, EFFECT OF TEMPERATURE-GRADIENT ON THE ELECTRICAL-PROPERTIES OF AU P-CDTE/AU STRUCTURES/, Inorganic materials, 34(9), 1998, pp. 871-872
Authors:
GILABERT U
TRIGUBO AB
GONZALEZ R
DERECA NEW
Citation: U. Gilabert et al., EPITAXY-SUBSTRATE INTERFACE OF SINGLE-CRYSTALLINE MCT FILMS GROWN ON CDTE, CDZNTE, AND CDTESE, Inorganic materials, 34(9), 1998, pp. 890-901
Citation: Nn. Sirota et al., HEAT-CAPACITY AND THERMODYNAMIC FUNCTIONS OF NEODYMIUM HEXABORIDE IN THE RANGE 5-300 K, Inorganic materials, 34(9), 1998, pp. 907-909
Authors:
SHENGUROV DV
PAVLOV DA
SHENGUROV VG
KHOKHLOV AF
Citation: Dv. Shengurov et al., PROPERTIES OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SI SUBLIMATION SOURCE ONTO NEGATIVELY BIASED SUBSTRATES, Inorganic materials, 34(9), 1998, pp. 943-945
Citation: Rm. Bayazitov et al., MELTING AND RECRYSTALLIZATION OF IMPLANTED SI UNDER HIGH-ENERGY ION-BEAM IRRADIATION, Inorganic materials, 34(9), 1998, pp. 946-950
Citation: Vv. Karzanov et al., LONG-RANGE EFFECT OF ION-BOMBARDMENT ON THE STATE OF NITROGEN AND OXYGEN-IMPLANTED INTO SILICON, Inorganic materials, 34(9), 1998, pp. 951-954
Citation: Yv. Martynenko et Pg. Moskovkin, LONG-RANGE EFFECT OF ION-BOMBARDMENT AND ENERGY-TRANSPORT IN SOLIDS, Inorganic materials, 34(9), 1998, pp. 955-957
Citation: Va. Perevoshchikov et Vd. Skupov, EFFECT OF ALPHA-BOMBARDMENT ON THE REFRACTIVE-INDEX OF SIO2-FILMS IN SIO2 SI STRUCTURES/, Inorganic materials, 34(9), 1998, pp. 958-960
Citation: Yy. Loginov et Pd. Brown, LONG-RANGE EFFECT OF ION MILLING AND FORMATION OF POINT-DEFECT ACCUMULATIONS IN II-VI SEMICONDUCTORS, Inorganic materials, 34(9), 1998, pp. 961-965