STRUCTURAL PERFECTION OF THIN PBTE FILMS ON SI SUBSTRATES

X-ray diffraction, selective etching, and scanning electron microscopy were used to study the structural perfection of PbTe crystals and thi n PbTe films grown on Si by the hot-wall technique. The dislocation de nsity in the PbTe films was found to be 10(5)-10(7) cm(-2). In determi ning the dislocation density from the intrinsic broadening of h00 x-ra y diffraction profiles, the dislocation distribution was assumed to he ''restrictedly random'' and single-crystal Si wafers with various ori entations were used as reference samples. The x-ray diffraction result s are in good agreement with selective etching data.