MELTING AND RECRYSTALLIZATION OF IMPLANTED SI UNDER HIGH-ENERGY ION-BEAM IRRADIATION

The diffusion and activation of ion-implanted P and B in Si under high -power (>10(7) W/cm(2)) pulsed ion-beam irradiation with a pulse durat ion of 10(-8) to 10(-7) s were studied. The volume absorption of C+ an d H+ ion energy was found to extend melting and recrystallization to a depth notably greater than that in the case of nanosecond laser irrad iation. The solidification rate remains high, and heavily doped layers with a carrier concentration of (2-3) x 10(21) cm(-3) are formed. The impurity redistribution under pulsed treatment was computer simulated , and the thermal stability of the formed layers was assessed.