Citation: J. Palm, THE NEW FINNISH TOBACCO ACT FROM A TRADE MARK POINT-OF-VIEW, IIC. International review of industrial property and copyright law, 28(5), 1997, pp. 706-714
Authors:
RANTALA M
KESANIEMI YA
KAIRALUOMA M
PALM J
SAVOLAINEN MJ
Citation: M. Rantala et al., EFFECT OF THE WEIGHT-REDUCTION ON GENE-EXPRESSION OF LIPOPROTEIN MODIFYING PROTEINS, Diabetologia, 40, 1997, pp. 1698-1698
Authors:
RANTALA ML
HANNUKSELA ML
PALM J
KAIRALUOMA MI
KESANIEMI AY
SAVOLAINEN MJ
Citation: Ml. Rantala et al., BODY-WEIGHT REDUCTION IS ASSOCIATED WITH REDUCED EXPRESSION OF CHOLESTERYL ESTER TRANSFER PROTEIN AND LIPOPROTEIN-LIPASE GENES, Circulation, 96(8), 1997, pp. 3690-3690
Citation: Jt. Makela et al., THE VALUE OF HERNIOGRAPHY IN THE DIAGNOSIS OF UNEXPLAINED GROIN PAIN, Annales chirurgiae et gynaecologiae, 85(4), 1996, pp. 300-304
Citation: M. Kittler et al., INTERACTION OF IRON WITH A GRAIN-BOUNDARY IN BORON-DOPED MULTICRYSTALLINE SILICON, Journal of applied physics, 77(8), 1995, pp. 3725-3728
Citation: J. Palm et al., LOCAL INVESTIGATION OF THE ELECTRICAL-PROPERTIES OF GRAIN-BOUNDARIES, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 56-60
Citation: K. Schimpf et al., ENHANCED DIFFUSION OF PHOSPHORUS AT GRAIN-BOUNDARIES IN MULTICRYSTALLINE SILICON, Crystal research and technology, 29(8), 1994, pp. 1123-1129
Citation: K. Schimpf et al., ELECTRIC-DIPOLE SPIN-RESONANCE OF GRAIN-BOUNDARIES IN MULTICRYSTALLINE SILICON, Physica status solidi. a, Applied research, 144(1), 1994, pp. 195-201
Citation: J. Palm et H. Alexander, LOCAL INVESTIGATION OF GRAIN-BOUNDARIES BY GRAIN-BOUNDARY EBIC, Physica status solidi. a, Applied research, 138(2), 1993, pp. 639-648
Citation: J. Palm et al., A STRUCTURE-ACTIVITY STUDY OF 4 DOPAMINE-D-1 AND DOPAMINE-D-2 RECEPTOR ANTAGONISTS, REPRESENTING THE PHENYLINDAN, PHENYINDENE, AND PHENYINDOLE STRUCTURAL CLASSES OF COMPOUNDS, Journal of medicinal chemistry, 36(20), 1993, pp. 2878-2885
Citation: J. Palm, LOCAL INVESTIGATION OF RECOMBINATION AT GRAIN-BOUNDARIES IN SILICON BY GRAIN BOUNDARY-ELECTRON BEAM-INDUCED CURRENT, Journal of applied physics, 74(2), 1993, pp. 1169-1178