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Results: 1-6 |
Results: 6

Authors: PANG SK SMITH AW ROHATGI A
Citation: Sk. Pang et al., EFFECT OF TRAP LOCATION AND TRAP-ASSISTED AUGER RECOMBINATION ON SILICON SOLAR-CELL PERFORMANCE, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 662-668

Authors: SHIU KK CHAN OY PANG SK
Citation: Kk. Shiu et al., FACTORS AFFECTING THE ELECTROANALYTICAL BEHAVIOR OF POLYPYRROLE-MODIFIED ELECTRODES BEARING COMPLEXING LIGANDS, Analytical chemistry, 67(17), 1995, pp. 2828-2834

Authors: SHIU KK PANG SK CHEUNG HK
Citation: Kk. Shiu et al., ELECTROANALYSIS OF METAL SPECIES AT POLYPYRROLE-MODIFIED ELECTRODES, Journal of electroanalytical chemistry [1992], 367(1-2), 1994, pp. 115-122

Authors: YASUTAKE K CHEN Z PANG SK ROHATGI A
Citation: K. Yasutake et al., MODELING AND CHARACTERIZATION OF INTERFACE STATE PARAMETERS AND SURFACE RECOMBINATION VELOCITY AT PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIO2-SI INTERFACE, Journal of applied physics, 75(4), 1994, pp. 2048-2054

Authors: PANG SK ROHATGI A
Citation: Sk. Pang et A. Rohatgi, A NEW METHODOLOGY FOR SEPARATING SHOCKLEY-READ-HALL LIFETIME AND AUGER RECOMBINATION COEFFICIENTS FROM THE PHOTOCONDUCTIVITY DECAY TECHNIQUE, Journal of applied physics, 74(9), 1993, pp. 5554-5560

Authors: CHEN Z PANG SK YASUTAKE K ROHATGI A
Citation: Z. Chen et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED OXIDE FOR LOW SURFACE RECOMBINATION VELOCITY AND HIGH EFFECTIVE LIFETIME IN SILICON, Journal of applied physics, 74(4), 1993, pp. 2856-2859
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