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Results: 2
PRECURSOR DEFECT TO THE VACANCY-DIOXYGEN CENTER IN SI
Authors:
LONDOS CA SARLIS N FYTROS LG PAPASTERGIOU K
Citation:
Ca. Londos et al., PRECURSOR DEFECT TO THE VACANCY-DIOXYGEN CENTER IN SI, Physical review. B, Condensed matter, 53(11), 1996, pp. 6900-6903
INTERPRETATION OF INFRARED DATA IN NEUTRON-IRRADIATED SILICON
Authors:
LONDOS CA GEORGIOU GI FYTROS LG PAPASTERGIOU K
Citation:
Ca. Londos et al., INTERPRETATION OF INFRARED DATA IN NEUTRON-IRRADIATED SILICON, Physical review. B, Condensed matter, 50(16), 1994, pp. 11531-11534
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