Authors: SOBOLEV MM ABRAMOV AV DERYAGIN NG DERYAGIN AG KUCHINSKII VI PAPENTSEV MI

Citation: Mm. Sobolev et al., RECOMBINATION-ENHANCED ANNEALING IN GAAS AND ALGAAS LAYERS, Semiconductors, 30(6), 1996, pp. 587-590

Authors: SOBOLEV MM KOCHNEV IV PAPENTSEV MI KALINOVSKY VS

Citation: Mm. Sobolev et al., METASTABLE DEFECTS IN AS-GROWN AND ELECTRON-IRRADIATED AL0.3GA0.7AS, Semiconductor science and technology, 11(11), 1996, pp. 1692-1695

Authors: SOBOLEV MM KOCHNEV IV PAPENTSEV MI

Citation: Mm. Sobolev et al., NEW BISTABLE DEFECT WITH DEEP LEVELS IN SI-DOPED ALXGA1-XAS, Semiconductors, 28(4), 1994, pp. 397-400

Authors: SOBOLEV MM GITTSOVICH AV PAPENTSEV MI KOCHNEV IV YAVICH BS

Citation: Mm. Sobolev et al., DEGRADATION MECHANISM OF GAAS ALGAAS QUANTUM-WELL LASER (VOL 26, PG 985, 1992)/, Semiconductors, 27(1), 1993, pp. 106-106