Authors: TIAN S YANG SH MORRIS S PARAB K TASCH AF KAMENITSA D REECE R FREER B SIMONTON RB MAGEE C

Citation: S. Tian et al., THE EFFECT OF DOSE-RATE ON ION-IMPLANTED IMPURITY PROFILES IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 144-147

Authors: YANG SH SNELL CM MORRIS SJ TIAN S PARAB K OBRADOVICH B MORRIS M TASCH AF

Citation: Sh. Yang et al., A MONTE-CARLO BINARY COLLISION MODEL FOR BF2 IMPLANTS INTO (100) SINGLE-CRYSTAL SILICON, Journal of the Electrochemical Society, 143(11), 1996, pp. 3784-3790

Authors: TIAN S YANG SH MORRIS S PARAB K TASCH AF KAMENITSA D REECE R FREER B SIMONTON RB MAGEE C

Citation: S. Tian et al., AN EXAMINATION OF THE EFFECT OF DOSE-RATE ON ION-IMPLANTED IMPURITY PROFILES IN SILICON, Journal of the Electrochemical Society, 142(9), 1995, pp. 3215-3219