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Authors: PARAB KB YANG SH MORRIS SJ TIAN S TASCH AF KAMENITSA D SIMONTON R MAGEE C
Citation: Kb. Parab et al., ANALYSIS OF ULTRASHALLOW DOPING PROFILES OBTAINED BY LOW-ENERGY ION-IMPLANTATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 260-264

Authors: YANG SH MORRIS SJ TIAN SY PARAB KB TASCH AF
Citation: Sh. Yang et al., MONTE-CARLO SIMULATION OF ARSENIC ION-IMPLANTATION IN (100) SINGLE-CRYSTAL SILICON, IEEE transactions on semiconductor manufacturing, 9(1), 1996, pp. 49-58

Authors: LIOU JJ HUANG CI BAYRAKTAROGLU B WILLIAMSON DC PARAB KB
Citation: Jj. Liou et al., BASE AND COLLECTOR LEAKAGE CURRENTS OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 76(5), 1994, pp. 3187-3193
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