MONTE-CARLO SIMULATION OF ARSENIC ION-IMPLANTATION IN (100) SINGLE-CRYSTAL SILICON

Authors
YANG SH MORRIS SJ TIAN SY PARAB KB TASCH AF
Citation
Sh. Yang et al., MONTE-CARLO SIMULATION OF ARSENIC ION-IMPLANTATION IN (100) SINGLE-CRYSTAL SILICON, IEEE transactions on semiconductor manufacturing, 9(1), 1996, pp. 49-58
Citations number
46
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Manufacturing","Physics, Applied
Journal title
IEEE transactions on semiconductor manufacturing → ACNP
ISSN journal
08946507
Volume
9
Issue
1
Year of publication
1996
Pages
49 - 58
Database
ISI
SICI code
0894-6507(1996)9:1<49:MSOAII>2.0.ZU;2-I
Abstract
In this paper is reported a new physically based Monte Carlo model and simulator for accurate simulation of arsenic ion implantation in (100 ) single-crystal silicon. A new damage generation model and an improve d electronic stopping power model have been developed. These new physi cally based models greatly improve the capability for predicting arsen ic as-implanted profiles. This new Monte Carlo model predicts very wel l the detailed profile dependence on the implant tilt and rotation ang les as well as on the implant dose and energy over the energy range 15 -180 keV.