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Results: 1-13 |
Results: 13
ENCOURAGE QUALITATIVE RESEARCH TO IMPROVE STUDENTS CLINICAL SKILLS
Authors: PARSONS GN KINSMAN SB UBEL PA
Citation: Gn. Parsons et al., ENCOURAGE QUALITATIVE RESEARCH TO IMPROVE STUDENTS CLINICAL SKILLS, Academic medicine, 73(9), 1998, pp. 933-934
SELF-ALIGNED GATE AND SOURCE DRAIN CONTACTS IN INVERTED-STAGGERED A-SI-H THIN-FILM TRANSISTORS FABRICATED USING SELECTIVE-AREA SILICON PECVD
Authors: YANG CS READ WW ARTHUR C SRINIVASAN E PARSONS GN
Citation: Cs. Yang et al., SELF-ALIGNED GATE AND SOURCE DRAIN CONTACTS IN INVERTED-STAGGERED A-SI-H THIN-FILM TRANSISTORS FABRICATED USING SELECTIVE-AREA SILICON PECVD, IEEE electron device letters, 19(6), 1998, pp. 180-182
SILANE CONSUMPTION AND CONVERSION ANALYSIS IN AMORPHOUS-SILICON AND SILICON-NITRIDE PLASMA DEPOSITION USING IN-SITU MASS-SPECTROSCOPY
Authors: CHOWDHURY AI KLEIN TM ANDERSON TM PARSONS GN
Citation: Ai. Chowdhury et al., SILANE CONSUMPTION AND CONVERSION ANALYSIS IN AMORPHOUS-SILICON AND SILICON-NITRIDE PLASMA DEPOSITION USING IN-SITU MASS-SPECTROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1852-1856
PLASMA-ENHANCED SELECTIVE-AREA MICROCRYSTALLINE SILICON DEPOSITION ONHYDROGENATED AMORPHOUS-SILICON - SURFACE MODIFICATION FOR CONTROLLED NUCLEATION
Authors: SMITH LL READ WW YANG CS SRINIVASAN E COURTNEY CH LAMB HH PARSONS GN
Citation: Ll. Smith et al., PLASMA-ENHANCED SELECTIVE-AREA MICROCRYSTALLINE SILICON DEPOSITION ONHYDROGENATED AMORPHOUS-SILICON - SURFACE MODIFICATION FOR CONTROLLED NUCLEATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1316-1320
HYDROGEN ABSTRACTION KINETICS AND CRYSTALLIZATION IN LOW-TEMPERATURE PLASMA DEPOSITION OF SILICON
Authors: SRINIVASAN E PARSONS GN
Citation: E. Srinivasan et Gn. Parsons, HYDROGEN ABSTRACTION KINETICS AND CRYSTALLIZATION IN LOW-TEMPERATURE PLASMA DEPOSITION OF SILICON, Applied physics letters, 72(4), 1998, pp. 456-458
REAL-TIME PROCESS SENSING AND METROLOGY IN AMORPHOUS AND SELECTIVE-AREA SILICON PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING IN-SITU MASS-SPECTROMETRY
Authors: CHOWDHURY AI READ WW RUBLOFF GW TEDDER LL PARSONS GN
Citation: Ai. Chowdhury et al., REAL-TIME PROCESS SENSING AND METROLOGY IN AMORPHOUS AND SELECTIVE-AREA SILICON PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING IN-SITU MASS-SPECTROMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 127-132
DOMINANT MONOHYDRIDE BONDING IN HYDROGENATED AMORPHOUS-SILICON THIN-FILMS FORMED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION AT ROOM-TEMPERATURE
Authors: SRINIVASAN E LLOYD DA PARSONS GN
Citation: E. Srinivasan et al., DOMINANT MONOHYDRIDE BONDING IN HYDROGENATED AMORPHOUS-SILICON THIN-FILMS FORMED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION AT ROOM-TEMPERATURE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(1), 1997, pp. 77-84
INVESTIGATION OF SUBSTRATE-DEPENDENT NUCLEATION OF PLASMA-DEPOSITED MICROCRYSTALLINE SILICON ON GLASS AND SILICON SUBSTRATES USING ATOMIC-FORCE MICROSCOPY
Authors: SMITH LL SRINIVASAN E PARSONS GN
Citation: Ll. Smith et al., INVESTIGATION OF SUBSTRATE-DEPENDENT NUCLEATION OF PLASMA-DEPOSITED MICROCRYSTALLINE SILICON ON GLASS AND SILICON SUBSTRATES USING ATOMIC-FORCE MICROSCOPY, Journal of applied physics, 82(12), 1997, pp. 6041-6046
HYDROGEN ELIMINATION AND PHASE-TRANSITIONS IN PULSED-GAS PLASMA DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE SILICON
Authors: SRINIVASAN E PARSONS GN
Citation: E. Srinivasan et Gn. Parsons, HYDROGEN ELIMINATION AND PHASE-TRANSITIONS IN PULSED-GAS PLASMA DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE SILICON, Journal of applied physics, 81(6), 1997, pp. 2847-2855
DYNAMIC RATE AND THICKNESS METROLOGY DURING POLY-SI RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION FROM SIH4 USING REAL-TIME IN-SITU MASS-SPECTROMETRY (VOL 14, PG 267, 1996)
Authors: TEDDER LL RUBLOFF GW CONAGHAN BF PARSONS GN
Citation: Ll. Tedder et al., DYNAMIC RATE AND THICKNESS METROLOGY DURING POLY-SI RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION FROM SIH4 USING REAL-TIME IN-SITU MASS-SPECTROMETRY (VOL 14, PG 267, 1996), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2680-2680
DYNAMIC RATE AND THICKNESS METROLOGY DURING POLY-SI RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION FROM SIH4 USING REAL-TIME IN-SITU MASS-SPECTROMETRY
Authors: TEDDER LL RUBLOFF GW COHAGHAN BF PARSONS GN
Citation: Ll. Tedder et al., DYNAMIC RATE AND THICKNESS METROLOGY DURING POLY-SI RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION FROM SIH4 USING REAL-TIME IN-SITU MASS-SPECTROMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(2), 1996, pp. 267-270
AB-INITIO CALCULATION OF HYDROGEN ABSTRACTION ENERGETICS FROM SILICONHYDRIDES
Authors: SRINIVASAN E YANG H PARSONS GN
Citation: E. Srinivasan et al., AB-INITIO CALCULATION OF HYDROGEN ABSTRACTION ENERGETICS FROM SILICONHYDRIDES, The Journal of chemical physics, 105(13), 1996, pp. 5467-5471
REAL-TIME PROCESS AND PRODUCT DIAGNOSTICS IN RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION USING IN-SITU MASS-SPECTROMETRIC SAMPLING
Authors: TEDDER LL RUBLOFF GW SHAREEF I ANDERLE M KIM DH PARSONS GN
Citation: Ll. Tedder et al., REAL-TIME PROCESS AND PRODUCT DIAGNOSTICS IN RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION USING IN-SITU MASS-SPECTROMETRIC SAMPLING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1924-1927
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