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Results:
1-8
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Results: 8
Authors:
PASKALEVA A
ATANASSOVA E
Citation: A. Paskaleva et E. Atanassova, DAMAGE IN THIN SIO2-SI STRUCTURES INDUCED BY RIE-MODE NITROGEN AND OXYGEN PLASMA, Solid-state electronics, 42(5), 1998, pp. 777-784
Authors:
ATANASSOVA E
PASKALEVA A
Citation: E. Atanassova et A. Paskaleva, STRUCTURAL-CHANGES IN THIN SIO2 ON SI AFTER RIE-LIKE NITROGEN PLASMA ACTION, Applied surface science, 120(3-4), 1997, pp. 306-316
Authors:
ATANASSOVA E
PASKALEVA A
Citation: E. Atanassova et A. Paskaleva, INFLUENCE OF THE RAPID THERMAL ANNEALING IN VACUUM ON THE XPS CHARACTERISTICS OF THIN SIO2, Applied surface science, 103(4), 1996, pp. 359-367
Authors:
SPASSOVA E
JIVKOV I
DANEV G
DIMOTROVA T
KOPRINAROVA J
PASKALEVA A
Citation: E. Spassova et al., LOW-PERMITTIVITY EVAPORATED POLYMER-POLYIMIDE, Vacuum, 47(11), 1996, pp. 1345-1346
Authors:
ATANASSOVA E
PASKALEVA A
Citation: E. Atanassova et A. Paskaleva, MOBILITY DEGRADATION OF INVERSION LAYER CARRIERS DUE TO MERIE-TYPE PLASMA ACTION, Solid-state electronics, 39(7), 1996, pp. 1033-1041
Authors:
PASKALEVA A
ATANASSOVA E
BESHKOV G
Citation: A. Paskaleva et al., THE EFFECT OF RAPID THERMAL ANNEALING IN VACUUM ON THE PROPERTIES OF THIN SIO2-FILMS, Journal of physics. D, Applied physics, 28(5), 1995, pp. 906-913
Authors:
PASKALEVA A
ATANASSOVA E
BESHKOV G
Citation: A. Paskaleva et al., RAPID THERMAL ANNEALING OF SIO2 FOR VLSI APPLICATIONS, Journal of non-crystalline solids, 187, 1995, pp. 35-39
Authors:
PASKALEVA A
ATANASSOVA E
Citation: A. Paskaleva et E. Atanassova, FOWLER-NORDHEIM TUNNELING INJECTION IN THE SI-SIO2 SYSTEM TREATED WITH ARGON PLASMA, Semiconductor science and technology, 8(8), 1993, pp. 1566-1570
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1-8
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