Authors: MEZDROGINA MM ABRAMOV AV MOSINA GN TRAPEZNIKOVA IN PATSEKIN AV

Citation: Mm. Mezdrogina et al., EFFECT OF ANNEALING IN AN ATOMIC-HYDROGEN ATMOSPHERE ON THE PROPERTIES OF AMORPHOUS HYDRATED SILICON FILMS AND THE PARAMETERS OF P-I-N STRUCTURES BASED ON THEM, Semiconductors, 32(5), 1998, pp. 555-561

Authors: GOLUBEV VG ZHERZDEV AV MOROZ GK PATSEKIN AV YAN DT

Citation: Vg. Golubev et al., STRONG PHOTOINDUCED INCREASE IN THE LUMINESCENCE INTENSITY OF ANODICALLY OXIDIZED POROUS SILICON, Semiconductors, 30(5), 1996, pp. 456-461

Authors: ABRAMOV AS VINOGRADOV AY GOLUBEV VG KOSAREV AI MATYUSHKINA MA PATSEKIN AV

Citation: As. Abramov et al., A STUDY OF AMORPHOUS HYDROGENATED SILICON-NITRIDE FILMS PRODUCED IN THE PLASMA OF A HIGH-FREQUENCY DISCHARGE, Semiconductors, 30(11), 1996, pp. 1011-1014

Authors: GOLUBEV VG KROPOTOV GI PATSEKIN AV SOBOLEV NA SHEK EI DUKIN AA

Citation: Vg. Golubev et al., FAR-INFRARED PHOTOCONDUCTIVITY OF SILICON IRRADIATED WITH FAST-NEUTRONS, Semiconductors, 29(10), 1995, pp. 981-983

Authors: ASTROVA EV GREKHOV IV KOZLOV VA KROPOTOV GI LEBEDEV AA PATSEKIN AV VORONKOV VB

Citation: Ev. Astrova et al., EFFECT OF CHEMICAL SURFACE-TREATMENT ON P-LAYER FORMATION IN THE INTERFACE REGION OF DIRECTLY BONDED SI WAFERS, Semiconductor science and technology, 8(9), 1993, pp. 1700-1705