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Results: 1-7 |
Results: 7
UNPINNED BEHAVIOR OF THE FERMI-LEVEL AND PHOTOVOLTAGE ON P-(100)GAAS SURFACE FACILITATED BY DEPOSITION OF CESIUM
Authors: ALPEROVICH VL PAULISH AG SCHEIBLER HE TYNNYI VI TEREKHOV AS
Citation: Vl. Alperovich et al., UNPINNED BEHAVIOR OF THE FERMI-LEVEL AND PHOTOVOLTAGE ON P-(100)GAAS SURFACE FACILITATED BY DEPOSITION OF CESIUM, Applied surface science, 104, 1996, pp. 228-233
EMISSION OF SPIN-POLARIZED ELECTRONS FROM STRAINED INGAP AND INGAASP PHOTOCATHODES
Authors: DRESCHER P PLUTZER S REICHERT E SCHEMIES M ALPEROVICH VL BOLKHOVITYANOV YB JAROSHEVICH AS PAULISH AG SCHEIBLER HE TEREKHOV AS
Citation: P. Drescher et al., EMISSION OF SPIN-POLARIZED ELECTRONS FROM STRAINED INGAP AND INGAASP PHOTOCATHODES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 381(1), 1996, pp. 169-173
UNPINNED BEHAVIOR OF THE ELECTRONIC-PROPERTIES OF A P-GAAS(CS,O) SURFACE AT ROOM-TEMPERATURE
Authors: ALPEROVICH VL PAULISH AG TEREKHOV AS
Citation: Vl. Alperovich et al., UNPINNED BEHAVIOR OF THE ELECTRONIC-PROPERTIES OF A P-GAAS(CS,O) SURFACE AT ROOM-TEMPERATURE, Surface science, 333, 1995, pp. 1250-1255
LIQUID PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INGAASP LAYERS FOR SPIN-POLARIZED ELECTRON SOURCES
Authors: BOLKHOVITYANOV YB ALPEROVICH VL JAROSHEVICH AS NOMEROTSKY NV PAULISH AG TEREKHOV AS TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., LIQUID PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INGAASP LAYERS FOR SPIN-POLARIZED ELECTRON SOURCES, Journal of crystal growth, 146(1-4), 1995, pp. 310-313
EVOLUTION OF ELECTRONIC-PROPERTIES AT THE P-GAAS(CS,O) SURFACE DURINGNEGATIVE ELECTRON-AFFINITY STATE FORMATION
Authors: ALPEROVICH VL PAULISH AG SCHEIBLER HE TEREKHOV AS
Citation: Vl. Alperovich et al., EVOLUTION OF ELECTRONIC-PROPERTIES AT THE P-GAAS(CS,O) SURFACE DURINGNEGATIVE ELECTRON-AFFINITY STATE FORMATION, Applied physics letters, 66(16), 1995, pp. 2122-2124
NEW MATERIAL FOR PHOTOEMISSION ELECTRON SOURCE - SEMICONDUCTOR ALLOY INGAASP GROWN ON GAAS SUBSTRATE
Authors: ALPEROVICH VL BOLKHOVITYANOV YB PAULISH AG TEREKHOV AS
Citation: Vl. Alperovich et al., NEW MATERIAL FOR PHOTOEMISSION ELECTRON SOURCE - SEMICONDUCTOR ALLOY INGAASP GROWN ON GAAS SUBSTRATE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 340(3), 1994, pp. 429-435
DOMINATION OF ADATOM-INDUCED OVER DEFECT-INDUCED SURFACE-STATES ON P-TYPE GAAS(CS,O) AT ROOM-TEMPERATURE
Authors: ALPEROVICH VL PAULISH AG TEREKHOV AS
Citation: Vl. Alperovich et al., DOMINATION OF ADATOM-INDUCED OVER DEFECT-INDUCED SURFACE-STATES ON P-TYPE GAAS(CS,O) AT ROOM-TEMPERATURE, Physical review. B, Condensed matter, 50(8), 1994, pp. 5480-5483
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