Authors:
IRENE EA
LIU Q
PAULSON WM
TOBIN PJ
HEGDE RI
Citation: Ea. Irene et al., MEASUREMENT OF N IN NITRIDED OXIDES USING SPECTROSCOPIC IMMERSION ELLIPSOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1697-1701
Citation: Ri. Hegde et al., SURFACE-TOPOGRAPHY OF PHOSPHORUS-DOPED POLYSILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1434-1441
Citation: Dp. Shum et al., A HIGHLY ROBUST PROCESS INTEGRATION WITH SCALED ONO INTERPOLY DIELECTRICS FOR EMBEDDED NONVOLATILE MEMORY APPLICATIONS, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1376-1377