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Results:
1-7
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Results: 7
Authors:
SHEN CC
MURGUIA J
GOLDSMAN N
PECKERAR M
MELNGAILIS J
ANTONIADIS DA
Citation: Cc. Shen et al., USE OF FOCUSED-ION-BEAM AND MODELING TO OPTIMIZE SUBMICRON MOSFET CHARACTERISTICS, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 453-459
Authors:
WANG W
CHANG C
MA D
PECKERAR M
BERRY I
GOLDSMAN N
MELNGAILIS J
Citation: W. Wang et al., SELF-ALIGNED SUBCHANNEL IMPLANT COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICES FABRICATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2816-2820
Authors:
PECKERAR M
MARRIAN C
PERKINS FK
Citation: M. Peckerar et al., FEATURE CONTRAST IN DOSE-EQUALIZATION SCHEMES USED FOR ELECTRON-BEAM PROXIMITY CONTROL, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3880-3886
Authors:
PECKERAR M
Citation: M. Peckerar, SOUTH-KOREA - A NEW TIGER FACES NEW TECHNOLOGY ISSUES, Solid state technology, 39(9), 1996, pp. 76
Authors:
OWENS AL
DENISON TJ
VERSNEL H
REBBERT M
PECKERAR M
SHAMMA SA
Citation: Al. Owens et al., MULTIELECTRODE ARRAY FOR MEASURING EVOKED-POTENTIALS FROM SURFACE OF FERRET PRIMARY AUDITORY-CORTEX, Journal of neuroscience methods, 58(1-2), 1995, pp. 209-220
Authors:
GROSSMAN K
PECKERAR M
Citation: K. Grossman et M. Peckerar, ACTIVE CURRENT LIMITATION FOR COLD-CATHODE FIELD EMITTERS, Nanotechnology, 5(4), 1994, pp. 179-182
Authors:
REBBERT M
ISAACSON P
FISCHER J
GREENHOUSE MA
GROSSMAN J
PECKERAR M
SMITH HA
Citation: M. Rebbert et al., MICROSTRUCTURE TECHNOLOGY FOR FABRICATION OF METAL-MESH GRIDS, Applied optics, 33(7), 1994, pp. 1286-1292
Risultati:
1-7
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