Authors: ELSAESSER DW YEO YK HENGEHOLD RL EVANS KR PEDROTTI FL

Citation: Dw. Elsaesser et al., ER-RELATED DEEP CENTERS IN GAAS DOPED WITH ER BY ION-IMPLANTATION ANDMOLECULAR-BEAM EPITAXY, Journal of applied physics, 77(8), 1995, pp. 3919-3926