Authors: NG GI PAVLIDIS D SAMELIS A PEHLKE D GARCIA JC HIRTZ JP

Citation: Gi. Ng et al., A COMPARATIVE-STUDY OF GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY CBE USING TBA/TBP AND ASH3/PH3 SOURCES/, IEEE electron device letters, 15(10), 1994, pp. 380-382