Authors: WESCH W HEFT A HOBERT H PEITER G WENDLER E BACHMANN T

Citation: W. Wesch et al., HIGH-DOSE MEV OXYGEN-ION IMPLANTATION INTO SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 160-163

Authors: PFENNIGHAUS K FISSEL A KAISER U WENDT M KRAUSSLICH J PEITER G SCHROTER B RICHTER W

Citation: K. Pfennighaus et al., INVESTIGATION OF GROWTH-CONDITIONS FOR EPITAXIAL-GROWTH OF SIC ON SI IN THE SOLID-SOURCE MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 164-167

Authors: WENDLER E HEFT A WESCH W PEITER G DUNKEN HH

Citation: E. Wendler et al., ANNEALING STUDIES OF B-SIC BY RBS AND OPTICAL SUBGAP SPECTROSCOPY( IMPLANTED 6H), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 341-346

Authors: HOBERT H DUNKEN H PEITER G

Citation: H. Hobert et al., DETERMINATION OF DIELECTRIC-CONSTANTS OF SUBSTRATES AND THIN-FILMS USING ANGULAR DEPENDENT IR REFLECTION SPECTRA, Journal of molecular structure, 349, 1995, pp. 301-304