Authors:
WONG SP
PENG QC
CHEUNG WY
MORTON R
LAU SS
Citation: Sp. Wong et al., EFFECT OF SUBSTRATE-TEMPERATURE ON PRECIPITATE COARSENING AND CO DISTRIBUTION IN SI IMPLANTED BY CO IONS WITH A METAL VAPOR VACUUM ARC ION-SOURCE, Semiconductor science and technology, 13(8), 1998, pp. 895-899
Citation: Jm. Mao et al., ELECTRICAL-PROPERTIES OF COSI2 PRECIPITATES IN COBALT-IMPLANTED SILICON - A CONDUCTING ATOMIC-FORCE MICROSCOPY STUDY, Journal of materials science letters, 17(3), 1998, pp. 219-222
Citation: Qc. Peng et al., CHARACTERIZATION OF BURIED COBALT SILICIDE LAYERS IN SI BY MEVVA IMPLANTATION, Thin solid films, 270(1-2), 1995, pp. 573-577