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Results: 3

Authors: WONG SP PENG QC CHEUNG WY MORTON R LAU SS
Citation: Sp. Wong et al., EFFECT OF SUBSTRATE-TEMPERATURE ON PRECIPITATE COARSENING AND CO DISTRIBUTION IN SI IMPLANTED BY CO IONS WITH A METAL VAPOR VACUUM ARC ION-SOURCE, Semiconductor science and technology, 13(8), 1998, pp. 895-899

Authors: MAO JM XU JB PENG QC WONG SP WILSON IH
Citation: Jm. Mao et al., ELECTRICAL-PROPERTIES OF COSI2 PRECIPITATES IN COBALT-IMPLANTED SILICON - A CONDUCTING ATOMIC-FORCE MICROSCOPY STUDY, Journal of materials science letters, 17(3), 1998, pp. 219-222

Authors: PENG QC WONG SP WILSON IH WANG N FUNG KK
Citation: Qc. Peng et al., CHARACTERIZATION OF BURIED COBALT SILICIDE LAYERS IN SI BY MEVVA IMPLANTATION, Thin solid films, 270(1-2), 1995, pp. 573-577
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