Citation: Nm. Ushakov et Vi. Petrosyan, WIDE-APERTURE FAST-ACTING PHOTOSENSOR BAS ED ON METAL-SEMICONDUCTOR-METAL SPIRAL PERIODIC STRUCTURE, Pis'ma v Zurnal tehniceskoj fiziki, 22(14), 1996, pp. 60-64
Citation: Nm. Ushakov et al., TEMPERATURE EFFECT ON THE HEIGHT OF METAL -SEMICONDUCTOR CONTACT BARRIER DURING ITS FORMATION, Zurnal tehniceskoj fiziki, 66(11), 1996, pp. 197-200