Authors:
PETTERSSON PO
ZUR A
DANIEL ES
LEVY HJ
MARSH OJ
MCGILL TC
Citation: Po. Pettersson et al., DEPENDENCE OF THE I-V CURVE OF A METAL-INSULATOR-SEMICONDUCTOR SWITCHON INSULATOR THICKNESS - AN EXPERIMENTAL AND THEORETICAL INVESTIGATION, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 286-292
Authors:
CROKE ET
HUNTER AT
PETTERSSON PO
AHN CC
MCGILL TC
Citation: Et. Croke et al., IMPROVED GROWTH-MORPHOLOGY OF SI-GE-C HETEROSTRUCTURES THROUGH THE USE OF SB SURFACTANT-ASSISTED MOLECULAR-BEAM EPITAXY, Thin solid films, 294(1-2), 1997, pp. 105-111
Authors:
PETTERSSON PO
AHN CC
MCGILL TC
CROKE ET
HUNTER AT
Citation: Po. Pettersson et al., CHARACTERIZATION OF SI SI1-YCY SUPERLATTICES GROWN BY SURFACTANT ASSISTED MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3030-3034
Authors:
PETTERSSON PO
AHN CC
MCGILL TC
CROKE ET
HUNTER AT
Citation: Po. Pettersson et al., SB-SURFACTANT-MEDIATED GROWTH OF SI SI1-YCY SUPERLATTICES BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 67(17), 1995, pp. 2530-2532
Citation: Po. Pettersson et al., SURFACE-MORPHOLOGY OF SILICON GROWN ON CAF2 SI BY ELECTRON-BEAM-ASSISTED MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 76(11), 1994, pp. 7328-7331