Authors: KIRIHATA T GALL M HOSOKAWA K DORTU JM WONG H PFEFFERL P JI BL WEINFURTNER O DEBROSSE JK TERLETZKI H SELZ M ELLIS W WORDEMAN MR KIEHL O

Citation: T. Kirihata et al., A 220-MM(2), 4-BANK AND 8-BANK, 256-MB SDRAM WITH SINGLE-SIDED STITCHED WL ARCHITECTURE, IEEE journal of solid-state circuits, 33(11), 1998, pp. 1711-1719

Authors: WATANABE Y WONG H KIRIHATA T KATO D DEBROSSE JK HARA T YOSHIDA M MUKAI H QUADER KN NAGAI T POECHMUELLER P PFEFFERL P WORDEMAN MR FUJII S

Citation: Y. Watanabe et al., A 286MM(2) 256 MB DRAM WITH X32 BOTH-ENDS DQ, IEICE transactions on electronics, E79C(7), 1996, pp. 978-985

Authors: WATANABE Y WONG H KIRIHATA T KATO D DEBROSSE JK HARA T YOSHIDA M MUKAI H QUADER KN NAGAI T POECHMUELLER P PFEFFERL P WORDEMAN MR FUJII S

Citation: Y. Watanabe et al., A 286MM(2) 256MB DRAM WITH X32 BOTH-ENDS DQ, IEEE journal of solid-state circuits, 31(4), 1996, pp. 567-574