Authors: BATRA S JENG N SULTAN A PICONE K BHATTACHARYA S PARK KH BANERJEE S KAO D MANNING M DENNISON C

Citation: S. Batra et al., EFFECT OF EPITAXIAL REALIGNMENT ON THE LEAKAGE BEHAVIOR OF ARSENIC-IMPLANTED, AS-DEPOSITED POLYCRYSTALLINE SI-ON-SINGLE CRYSTAL SI DIODES, Journal of electronic materials, 22(5), 1993, pp. 551-554

Authors: BATRA S PICONE K PARK KH BHATTACHARYA S BANERJEE S LEE J MANNING M DENNISON C

Citation: S. Batra et al., STUDY OF LATERAL NONUNIFORMITY AS A FUNCTION OF JUNCTION DEPTH IN ULTRA-SHALLOW JUNCTIONS AND ITS EFFECT ON LEAKAGE BEHAVIOR IN AS-DEPOSITED POLYCRYSTALLINE SI AND AMORPHOUS SI DIODES, Solid-state electronics, 36(7), 1993, pp. 955-960