EFFECT OF EPITAXIAL REALIGNMENT ON THE LEAKAGE BEHAVIOR OF ARSENIC-IMPLANTED, AS-DEPOSITED POLYCRYSTALLINE SI-ON-SINGLE CRYSTAL SI DIODES

When dopants are indiffused from a heavily implanted polycrystalline s ilicon film deposited on a silicon substrate, high thermal budget anne aling can cause the interfacial ''native'' oxide at the polycrystallin e silicon-single crystal silicon interface to break up into oxide clus ters, causing epitaxial realignment of the polycrystalline silicon lay er with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse ef fects on the leakage characteristics of the shallow junctions formed i n the silicon substrate using this technique. The degradation in the l eakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.