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Results: 1-25 | 26-35
Results: 1-25/35
STUDIES ON STRUCTURAL, ELECTRICAL, COMPOSITIONAL, AND MECHANICAL-PROPERTIES OF WSIX THIN-FILMS PRODUCED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
Authors: SANTUCCI S LOZZI L PASSACANTANDO M PICOZZI P PETRICOLA P MOCCIA G ALFONSETTI R DIAMANTI R
Citation: S. Santucci et al., STUDIES ON STRUCTURAL, ELECTRICAL, COMPOSITIONAL, AND MECHANICAL-PROPERTIES OF WSIX THIN-FILMS PRODUCED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1207-1212
SCANNING FORCE MICROSCOPY STUDY OF ULTRATHIN FILMS OF NICKEL-PHTHALOCYANINE ON GRAPHITE
Authors: SANTUCCI S DINARDO S LOZZI L OTTAVIANO L PASSACANTANDO M PICOZZI P
Citation: S. Santucci et al., SCANNING FORCE MICROSCOPY STUDY OF ULTRATHIN FILMS OF NICKEL-PHTHALOCYANINE ON GRAPHITE, Surface review and letters, 5(1), 1998, pp. 433-436
X-RAY PHOTOELECTRON-SPECTROSCOPY STUDIES OF SILICON SUBOXIDES OBTAINED BY THE SOL-GEL METHOD
Authors: SANTUCCI S CORDESCHI E LOZZI L PASSACANTANDO M PICOZZI P DEGLIESPOSTI LM
Citation: S. Santucci et al., X-RAY PHOTOELECTRON-SPECTROSCOPY STUDIES OF SILICON SUBOXIDES OBTAINED BY THE SOL-GEL METHOD, Journal of materials research, 12(1), 1997, pp. 100-105
COMPOSITIONAL CHARACTERIZATION OF VERY THIN SIO2 SI3N4/SIO2 STACKED FILMS BY X-RAY PHOTOEMISSION SPECTROSCOPY AND TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROSCOPY TECHNIQUES/
Authors: SANTUCCI S LOZZI L OTTAVIANO L PASSACANTANDO M PICOZZI P MOCCIA G ALFONSETTI R DIGIACOMO A FIORANI P
Citation: S. Santucci et al., COMPOSITIONAL CHARACTERIZATION OF VERY THIN SIO2 SI3N4/SIO2 STACKED FILMS BY X-RAY PHOTOEMISSION SPECTROSCOPY AND TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROSCOPY TECHNIQUES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 905-910
RECTIFYING BEHAVIOR OF SILICON-PHTHALOCYANINE JUNCTIONS INVESTIGATED WITH SCANNING-TUNNELING-MICROSCOPY SPECTROSCOPY
Authors: OTTAVIANO L SANTUCCI S DINARDO S LOZZI L PASSACANTANDO M PICOZZI P
Citation: L. Ottaviano et al., RECTIFYING BEHAVIOR OF SILICON-PHTHALOCYANINE JUNCTIONS INVESTIGATED WITH SCANNING-TUNNELING-MICROSCOPY SPECTROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 1014-1019
NIPC SI(111)(7X7) STUDIED WITH XPS, STM AND TAPPING MODE AIR AFM/
Authors: OTTAVIANO L DINARDO S LOZZI L PASSACANTANDO M PICOZZI P SANTUCCI S
Citation: L. Ottaviano et al., NIPC SI(111)(7X7) STUDIED WITH XPS, STM AND TAPPING MODE AIR AFM/, Surface review and letters, 4(1), 1997, pp. 59-64
THIN AND ULTRA-THIN FILMS OF NICKEL PHTHALOCYANINE GROWN ON HIGHLY ORIENTED PYROLITIC GRAPHITE - AN XPS, UHV-AFM AND AIR TAPPING-MODE AFM STUDY
Authors: OTTAVIANO L DINARDO S LOZZI L PASSACANTANDO M PICOZZI P SANTUCCI S
Citation: L. Ottaviano et al., THIN AND ULTRA-THIN FILMS OF NICKEL PHTHALOCYANINE GROWN ON HIGHLY ORIENTED PYROLITIC GRAPHITE - AN XPS, UHV-AFM AND AIR TAPPING-MODE AFM STUDY, Surface science, 373(2-3), 1997, pp. 318-332
COMPOSITIONAL AND ELECTRICAL-PROPERTIES OF SIO2 SI3N4/SIO2 STACKED FILMS GROWN ONTO SILICON SUBSTRATES AND ANNEALED IN HYDROGEN/
Authors: SANTUCCI S ALFONSETTI R DIGIACOMO A FIORANI P LOZZI L MOCCIA G OTTAVIANO L PASSACANTANDO M PICOZZI P
Citation: S. Santucci et al., COMPOSITIONAL AND ELECTRICAL-PROPERTIES OF SIO2 SI3N4/SIO2 STACKED FILMS GROWN ONTO SILICON SUBSTRATES AND ANNEALED IN HYDROGEN/, Journal of non-crystalline solids, 216, 1997, pp. 156-161
INFLUENCE OF NONDIPOLAR TERMS ON THE CU L(2,3) AND M(2,3) ELECTRON-ENERGY-LOSS FINE-STRUCTURE (EELFS) SPECTRA IN TRANSMISSION AND REFLECTION MODE
Authors: DIOCIAIUTI M LOZZI L PASSACANTANDO M SANTUCCI S PICOZZI P DECRESCENZI M
Citation: M. Diociaiuti et al., INFLUENCE OF NONDIPOLAR TERMS ON THE CU L(2,3) AND M(2,3) ELECTRON-ENERGY-LOSS FINE-STRUCTURE (EELFS) SPECTRA IN TRANSMISSION AND REFLECTION MODE, Journal of electron spectroscopy and related phenomena, 82(1-2), 1996, pp. 1-12
STRUCTURAL AND OPTICAL-PROPERTIES OF LOW-ENERGY ELECTRONS IRRADIATED KCL-LIF MULTILAYER FILMS
Authors: SOMMA F CREMONA M MONTEREALI RM PASSACANTANDO M PICOZZI P SANTUCCI S
Citation: F. Somma et al., STRUCTURAL AND OPTICAL-PROPERTIES OF LOW-ENERGY ELECTRONS IRRADIATED KCL-LIF MULTILAYER FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 212-215
STUDY BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND X-RAY-DIFFRACTION OF THE GROWTH OF TIN THIN-FILMS OBTAINED BY NITRIDATION OF TI LAYERS
Authors: SANTUCCI S LOZZI L PASSACANTANDO M PICOZZI P ALFONSETTI R DIAMANTI R MOCCIA G
Citation: S. Santucci et al., STUDY BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND X-RAY-DIFFRACTION OF THE GROWTH OF TIN THIN-FILMS OBTAINED BY NITRIDATION OF TI LAYERS, Thin solid films, 291, 1996, pp. 376-380
INVESTIGATION ON THE ELECTRONIC-STRUCTURE OF FE DEPOSITED ONTO POLYCRYSTALLINE COPPER
Authors: SANTUCCI S DINARDO S LOZZI L PASSACANTANDO M PICOZZI P
Citation: S. Santucci et al., INVESTIGATION ON THE ELECTRONIC-STRUCTURE OF FE DEPOSITED ONTO POLYCRYSTALLINE COPPER, Surface science, 352, 1996, pp. 572-576
XPS, LEED AND AFM INVESTIGATION OF THE SI(100) SURFACE AFTER THE DEPOSITION AND ANNEALING OF TELLURIUM THIN-FILMS
Authors: SANTUCCI S DINARDO S LOZZI L PASSACANTANDO M PICOZZI P
Citation: S. Santucci et al., XPS, LEED AND AFM INVESTIGATION OF THE SI(100) SURFACE AFTER THE DEPOSITION AND ANNEALING OF TELLURIUM THIN-FILMS, Surface science, 352, 1996, pp. 1027-1032
PRODUCTION AND CHARACTERIZATION OF MULTILAYER KCL-LIF THIN-FILMS ON GLASS
Authors: SOMMA F ERCOLI A SANTUCCI S LOZZI L PASSACANTANDO M PICOZZI P
Citation: F. Somma et al., PRODUCTION AND CHARACTERIZATION OF MULTILAYER KCL-LIF THIN-FILMS ON GLASS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1013-1016
XPS ANALYSIS ON SIO2 SOL-GEL THIN-FILMS
Authors: SANTUCCI S DINARDO S LOZZI L PASSACANTANDO M PICOZZI P
Citation: S. Santucci et al., XPS ANALYSIS ON SIO2 SOL-GEL THIN-FILMS, Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 623-628
REACTIVITY TOWARDS OXYGEN OF TE SI(100) SURFACES INVESTIGATED BY ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY, X-RAY PHOTOELECTRON-SPECTROSCOPY AND LOW-ENERGY-ELECTRON DIFFRACTION SPECTROSCOPY/
Authors: DINARDO S LOZZI L PASSACANTANDO M PICOZZI P SANTUCCI S
Citation: S. Dinardo et al., REACTIVITY TOWARDS OXYGEN OF TE SI(100) SURFACES INVESTIGATED BY ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY, X-RAY PHOTOELECTRON-SPECTROSCOPY AND LOW-ENERGY-ELECTRON DIFFRACTION SPECTROSCOPY/, Journal of electron spectroscopy and related phenomena, 74(2), 1995, pp. 129-134
THE USE OF THE AUGER PARAMETER IN THE CHARACTERIZATION OF SOME SILICON-COMPOUNDS
Authors: LOZZI L PASSACANTANDO M PICOZZI P SANTUCCI S
Citation: L. Lozzi et al., THE USE OF THE AUGER PARAMETER IN THE CHARACTERIZATION OF SOME SILICON-COMPOUNDS, Journal of electron spectroscopy and related phenomena, 72, 1995, pp. 97-100
EXFAS STUDIES ON THE THERMAL-BEHAVIOR OF COPPER SURFACE
Authors: LOZZI L PASSACANTANDO M PICOZZI P SANTUCCI S DECRESCENZI M
Citation: L. Lozzi et al., EXFAS STUDIES ON THE THERMAL-BEHAVIOR OF COPPER SURFACE, Journal of electron spectroscopy and related phenomena, 72, 1995, pp. 223-227
GROWTH OF TE THIN-FILMS DEPOSITED AT ROOM-TEMPERATURE ON THE SI(100)2X1 SURFACE
Authors: DINARDO S LOZZI L PASSACANTANDO M PICOZZI P SANTUCCI S
Citation: S. Dinardo et al., GROWTH OF TE THIN-FILMS DEPOSITED AT ROOM-TEMPERATURE ON THE SI(100)2X1 SURFACE, Journal of electron spectroscopy and related phenomena, 71(1), 1995, pp. 39-45
EELFS AND EXFAS ELECTRON SPECTROSCOPIES - A COMBINED STRUCTURAL INVESTIGATION
Authors: LOZZI L PASSACANTANDO M PICOZZI P SANTUCCI S DECRESCENZI M
Citation: L. Lozzi et al., EELFS AND EXFAS ELECTRON SPECTROSCOPIES - A COMBINED STRUCTURAL INVESTIGATION, Surface review and letters, 2(2), 1995, pp. 255-268
ELECTRON-SPECTROSCOPY INVESTIGATION OF TE THIN-FILMS DEPOSITED AT ROOM-TEMPERATURE ON SI(100)2X1
Authors: DINARDO S LOZZI L PASSACANTANDO M PICOZZI P SANTUCCI S
Citation: S. Dinardo et al., ELECTRON-SPECTROSCOPY INVESTIGATION OF TE THIN-FILMS DEPOSITED AT ROOM-TEMPERATURE ON SI(100)2X1, Surface science, 333, 1995, pp. 569-574
OXIDATION OF THE FE CU(100) INTERFACE
Authors: LOZZI L PASSACANTANDO M PICOZZI P SANTUCCI S DENDAAS H
Citation: L. Lozzi et al., OXIDATION OF THE FE CU(100) INTERFACE, Surface science, 333, 1995, pp. 703-709
ELECTRONIC-PROPERTIES OF CRYSTALLINE AND AMORPHOUS SIO2 INVESTIGATED VIA ALL-ELECTRON CALCULATIONS AND PHOTOEMISSION SPECTROSCOPY
Authors: DIPOMPONIO A CONTINENZA A LOZZI L PASSACANTANDO M SANTUCCI S PICOZZI P
Citation: A. Dipomponio et al., ELECTRONIC-PROPERTIES OF CRYSTALLINE AND AMORPHOUS SIO2 INVESTIGATED VIA ALL-ELECTRON CALCULATIONS AND PHOTOEMISSION SPECTROSCOPY, Solid state communications, 95(5), 1995, pp. 313-317
SIOX SURFACE STOICHIOMETRY BY XPS - A COMPARISON OF VARIOUS METHODS
Authors: ALFONSETTI R DESIMONE G LOZZI L PASSACANTANDO M PICOZZI P SANTUCCI S
Citation: R. Alfonsetti et al., SIOX SURFACE STOICHIOMETRY BY XPS - A COMPARISON OF VARIOUS METHODS, Surface and interface analysis, 22(1-12), 1994, pp. 89-92
SURFACE STOICHIOMETRY DETERMINATION OF SIOXNY THIN-FILMS BY MEANS OF XPS
Authors: LOZZI L PASSACANTANDO M PICOZZI P SANTUCCI S TOMASSI G ALFONSETTI R BORGHESI A
Citation: L. Lozzi et al., SURFACE STOICHIOMETRY DETERMINATION OF SIOXNY THIN-FILMS BY MEANS OF XPS, Surface and interface analysis, 22(1-12), 1994, pp. 190-192
Risultati: 1-25 | 26-35