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Results: 1-17 |
Results: 17
2-DIMENSIONAL ELECTRON-GAS MOBILITY AS A FUNCTION OF VIRTUAL SUBSTRATE QUALITY IN STRAINED SI SIGE HETEROJUNCTIONS/
Authors: CHURCHILL AC ROBBINS DJ WALLIS DJ GRIFFIN N PAUL DJ PIDDUCK AJ LEONG WY WILLIAMS GM
Citation: Ac. Churchill et al., 2-DIMENSIONAL ELECTRON-GAS MOBILITY AS A FUNCTION OF VIRTUAL SUBSTRATE QUALITY IN STRAINED SI SIGE HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1634-1638
ELECTRICAL-PROPERTIES AND UNIFORMITY OF 2-DIMENSIONAL ELECTRON GASES GROWN ON CLEANED SIGE VIRTUAL SUBSTRATES
Authors: PAUL DJ AHMED A PEPPER M CHURCHILL AC ROBBINS DJ WALLIS DJ PIDDUCK AJ
Citation: Dj. Paul et al., ELECTRICAL-PROPERTIES AND UNIFORMITY OF 2-DIMENSIONAL ELECTRON GASES GROWN ON CLEANED SIGE VIRTUAL SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1644-1647
OPTICAL-PROPERTIES OF BONDED SILICON SILICIDE ON INSULATOR ((SOI)-O-2) - A NEW SUBSTRATE FOR ELECTRONIC AND OPTICAL-DEVICES
Authors: NAYAR V RUSSELL J CARLINE RT PIDDUCK AJ QUINN C NEVIN A BLACKSTONE S
Citation: V. Nayar et al., OPTICAL-PROPERTIES OF BONDED SILICON SILICIDE ON INSULATOR ((SOI)-O-2) - A NEW SUBSTRATE FOR ELECTRONIC AND OPTICAL-DEVICES, Thin solid films, 313, 1998, pp. 276-280
HIGH-MOBILITY 2-DIMENSIONAL ELECTRON GASES IN SI SIGE HETEROSTRUCTURES ON RELAXED SIGE LAYERS GROWN AT HIGH-TEMPERATURE/
Authors: CHURCHILL AC ROBBINS DJ WALLIS DJ GRIFFIN N PAUL DJ PIDDUCK AJ
Citation: Ac. Churchill et al., HIGH-MOBILITY 2-DIMENSIONAL ELECTRON GASES IN SI SIGE HETEROSTRUCTURES ON RELAXED SIGE LAYERS GROWN AT HIGH-TEMPERATURE/, Semiconductor science and technology, 12(8), 1997, pp. 943-946
SCANNING PROBE MICROSCOPY OF AUTOMOTIVE ANTIWEAR FILMS
Authors: PIDDUCK AJ SMITH GC
Citation: Aj. Pidduck et Gc. Smith, SCANNING PROBE MICROSCOPY OF AUTOMOTIVE ANTIWEAR FILMS, Wear, 212(2), 1997, pp. 254-264
CONTROL OF LIQUID-CRYSTAL ALIGNMENT BY POLYIMIDE SURFACE MODIFICATIONUSING ATOMIC-FORCE MICROSCOPY
Authors: PIDDUCK AJ HASLAM SD BRYANBROWN GP BANNISTER R KITELY ID
Citation: Aj. Pidduck et al., CONTROL OF LIQUID-CRYSTAL ALIGNMENT BY POLYIMIDE SURFACE MODIFICATIONUSING ATOMIC-FORCE MICROSCOPY, Applied physics letters, 71(20), 1997, pp. 2907-2909
ATOMIC-FORCE MICROSCOPY STUDIES OF RUBBED POLYIMIDE SURFACES USED FORLIQUID-CRYSTAL ALIGNMENT
Authors: PIDDUCK AJ BRYANBROWN GP HASLAM S BANNISTER R KITELY I MCMASTER TJ BOOGAARD L
Citation: Aj. Pidduck et al., ATOMIC-FORCE MICROSCOPY STUDIES OF RUBBED POLYIMIDE SURFACES USED FORLIQUID-CRYSTAL ALIGNMENT, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1723-1728
ESTIMATION OF MICROSCOPIC RUBBING ALIGNMENT PARAMETERS
Authors: PIDDUCK AJ BRYANBROWN GP HASLAM SD BANNISTER R
Citation: Aj. Pidduck et al., ESTIMATION OF MICROSCOPIC RUBBING ALIGNMENT PARAMETERS, Liquid crystals, 21(5), 1996, pp. 759-763
ATOMIC-FORCE MICROSCOPY STUDIES OF SUBSTRATE CLEANING USING TRIS(DIMETHYLAMINO) ARSENIC AND TRIS(DIMETHYLAMINO) ANTIMONY AND INVESTIGATIONSOF SURFACE DECOMPOSITION MECHANISMS
Authors: WHITAKER TJ MARTIN T JOHNSON AD PIDDUCK AJ
Citation: Tj. Whitaker et al., ATOMIC-FORCE MICROSCOPY STUDIES OF SUBSTRATE CLEANING USING TRIS(DIMETHYLAMINO) ARSENIC AND TRIS(DIMETHYLAMINO) ANTIMONY AND INVESTIGATIONSOF SURFACE DECOMPOSITION MECHANISMS, Journal of crystal growth, 164(1-4), 1996, pp. 125-131
GROWTH-MORPHOLOGY EVOLUTION AND DISLOCATION INTRODUCTION IN THE INGAAS GAAS HETEROEPITAXIAL SYSTEM/
Authors: CULLIS AG PIDDUCK AJ EMENY MT
Citation: Ag. Cullis et al., GROWTH-MORPHOLOGY EVOLUTION AND DISLOCATION INTRODUCTION IN THE INGAAS GAAS HETEROEPITAXIAL SYSTEM/, Journal of crystal growth, 158(1-2), 1996, pp. 15-27
MISFIT DISLOCATION SOURCES AT SURFACE RIPPLE TROUGHS IN CONTINUOUS HETEROEPITAXIAL LAYERS
Authors: CULLIS AG PIDDUCK AJ EMENY MT
Citation: Ag. Cullis et al., MISFIT DISLOCATION SOURCES AT SURFACE RIPPLE TROUGHS IN CONTINUOUS HETEROEPITAXIAL LAYERS, Physical review letters, 75(12), 1995, pp. 2368-2371
GROWTH RIPPLES UPON STRAINED SIGE EPITAXIAL LAYERS ON SI AND MISFIT DISLOCATION INTERACTIONS
Authors: CULLIS AG ROBBINS DJ BARNETT SJ PIDDUCK AJ
Citation: Ag. Cullis et al., GROWTH RIPPLES UPON STRAINED SIGE EPITAXIAL LAYERS ON SI AND MISFIT DISLOCATION INTERACTIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1924-1931
REMOVAL OF SURFACE CONTAMINATION AFTER REACTIVE ION ETCHING OF SILICON DIOXIDE
Authors: JACKSON R PIDDUCK AJ GREEN MA
Citation: R. Jackson et al., REMOVAL OF SURFACE CONTAMINATION AFTER REACTIVE ION ETCHING OF SILICON DIOXIDE, Vacuum, 45(5), 1994, pp. 519-524
AFM AND X-RAY STUDIES OF FILMS FORMED BY THERMAL EVAPORATION AND BY THE LB TECHNIQUE
Authors: ALIADIB Z HODGE P TREDGOLD RH WOOLLEY M PIDDUCK AJ
Citation: Z. Aliadib et al., AFM AND X-RAY STUDIES OF FILMS FORMED BY THERMAL EVAPORATION AND BY THE LB TECHNIQUE, Thin solid films, 242(1-2), 1994, pp. 157-162
THE SURFACE-ROUGHNESS AND OPTICAL-PROPERTIES OF HIGH-QUALITY SI EPITAXIAL LAYERS
Authors: NAYAR V PICKERING C PIDDUCK AJ CARLINE RT LEONG WY ROBBINS DJ
Citation: V. Nayar et al., THE SURFACE-ROUGHNESS AND OPTICAL-PROPERTIES OF HIGH-QUALITY SI EPITAXIAL LAYERS, Thin solid films, 233(1-2), 1993, pp. 40-45
EVOLUTION OF SURFACE-MORPHOLOGY AND STRAIN DURING SIGE EPITAXY (VOL 222, PG 78, 1992)
Authors: PIDDUCK AJ
Citation: Aj. Pidduck, EVOLUTION OF SURFACE-MORPHOLOGY AND STRAIN DURING SIGE EPITAXY (VOL 222, PG 78, 1992), Thin solid films, 227(2), 1993, pp. 224-224
REAL-TIME LASER-LIGHT SCATTERING STUDIES OF SURFACE-TOPOGRAPHY DEVELOPMENT DURING GAAS MBE GROWTH
Authors: SMITH GW PIDDUCK AJ WHITEHOUSE CR GLASPER JL SPOWART J
Citation: Gw. Smith et al., REAL-TIME LASER-LIGHT SCATTERING STUDIES OF SURFACE-TOPOGRAPHY DEVELOPMENT DURING GAAS MBE GROWTH, Journal of crystal growth, 127(1-4), 1993, pp. 966-971
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