Authors: GOTTSCHALCH V FRANZHELD R PIETZONKA I SCHWABE R BENNDORF G WAGNER G

Citation: V. Gottschalch et al., MOVPE GROWTH OF SPONTANEOUSLY ORDERED (GAIN) AND (ALIN)P LAYERS LATTICE-MATCHED TO GAAS SUBSTRATES, Crystal research and technology, 32(1), 1997, pp. 69-82

Authors: KIRPAL G GERHARDT M BENNDORF G SCHWABE R PIETAG F PIETZONKA I LIPPOLD G WAGNER G FRANZHELD R GOTTSCHALCH V

Citation: G. Kirpal et al., MOVPE GROWTH AND CHARACTERIZATION OF GAINAS(P) ON (001)INP USING DIETHYLTERTIARYBUTYLARSINE (DETBAS) AND TERTIARYBUTYLPHOSPHINE (TBP) AS THE GROUP-V SOURCES, Journal of crystal growth, 170(1-4), 1997, pp. 167-172

Authors: PIETZONKA I HIRSCH D GOTTSCHALCH V SCHWABE R FRANZHELD R BENTE K BIGL F

Citation: I. Pietzonka et al., ATOMIC-FORCE MICROSCOPY ON (001) SURFACES OF GAAS MOVPE LAYERS, CHEMICAL VAPOR DEPOSITION, 2(2), 1996, pp. 44-48

Authors: SCHUBERT M RHEINLANDER B FRANKE E PIETZONKA I SKRINIAROVA J GOTTSCHALCH V

Citation: M. Schubert et al., DIRECT-GAP REDUCTION AND VALENCE-BAND SPLITTING OF ORDERED INDIRECT-GAP ALINP2 STUDIED BY DARK-FIELD SPECTROSCOPY, Physical review. B, Condensed matter, 54(24), 1996, pp. 17616-17619