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Results: 1-12 |
Results: 12
NOVEL SYMMETRY IN THE GROWTH OF GALLIUM NITRIDE ON MAGNESIUM ALUMINATE SUBSTRATES
Authors: GEORGE T JACOBSOHN E PIKE WT CHANGCHIEN P KHAN MA YANG JW MAHAJAN S
Citation: T. George et al., NOVEL SYMMETRY IN THE GROWTH OF GALLIUM NITRIDE ON MAGNESIUM ALUMINATE SUBSTRATES, Applied physics letters, 68(3), 1996, pp. 337-339
MEASUREMENTS OF LOCAL STRAIN VARIATION IN SI1-XGEX SI HETEROSTRUCTURES/
Authors: BELL LD KAISER WJ MANION SJ MILLIKEN AM PIKE WT FATHAUER RW
Citation: Ld. Bell et al., MEASUREMENTS OF LOCAL STRAIN VARIATION IN SI1-XGEX SI HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1602-1607
A MICROSTRUCTURAL COMPARISON OF THE INITIAL GROWTH OF ALN AND GAN LAYERS ON BASAL-PLANE SAPPHIRE AND SIC SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: GEORGE T PIKE WT KHAN MA KUZNIA JN CHANGCHIEN P
Citation: T. George et al., A MICROSTRUCTURAL COMPARISON OF THE INITIAL GROWTH OF ALN AND GAN LAYERS ON BASAL-PLANE SAPPHIRE AND SIC SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 24(4), 1995, pp. 241-247
BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF STRAIN NONUNIFORMITIES IN SI1-XGEX SI STRUCTURES/
Authors: BELL LD KAISER WJ MANION SJ MILLIKEN AM FATHAUER RW PIKE WT
Citation: Ld. Bell et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF STRAIN NONUNIFORMITIES IN SI1-XGEX SI STRUCTURES/, Physical review. B, Condensed matter, 52(16), 1995, pp. 12081-12089
HIGH-T-C EDGE-GEOMETRY SNS WEAK LINKS ON SILICON-ON-SAPPHIRE SUBSTRATES
Authors: HUNT BD FOOTE MC PIKE WT BARNER JB VASQUEZ RP
Citation: Bd. Hunt et al., HIGH-T-C EDGE-GEOMETRY SNS WEAK LINKS ON SILICON-ON-SAPPHIRE SUBSTRATES, Physica. C, Superconductivity, 230(1-2), 1994, pp. 141-152
BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF STRAINED SI1-XGEX LAYERS
Authors: BELL LD MILLIKEN AM MANION SJ KAISER WJ FATHAUER RW PIKE WT
Citation: Ld. Bell et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF STRAINED SI1-XGEX LAYERS, Physical review. B, Condensed matter, 50(11), 1994, pp. 8082-8085
HIGH-PERFORMANCE INGAAS GAAS QUANTUM-WELL INFRARED PHOTODETECTORS
Authors: GUNAPALA SD BANDARA KMSV LEVINE BF SARUSI G PARK JS LIN TL PIKE WT LIU JK
Citation: Sd. Gunapala et al., HIGH-PERFORMANCE INGAAS GAAS QUANTUM-WELL INFRARED PHOTODETECTORS, Applied physics letters, 64(25), 1994, pp. 3431-3433
MICROSTRUCTURE AND LIGHT-EMISSION IN STAIN-ETCHED SI1-XGEX ALLOYS
Authors: PIKE WT KSENDZOV A FATHAUER RW GEORGE T
Citation: Wt. Pike et al., MICROSTRUCTURE AND LIGHT-EMISSION IN STAIN-ETCHED SI1-XGEX ALLOYS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1401-1406
NOVEL SI-BASED SUPERLATTICES CONSISTING OF ALTERNATING LAYERS OF CRYSTALLINE SI AND POROUS AMORPHOUS SI1-XGEX ALLOYS
Authors: FATHAUER RW GEORGE T JONES EW PIKE WT KSENDZOV A VASQUEZ RP
Citation: Rw. Fathauer et al., NOVEL SI-BASED SUPERLATTICES CONSISTING OF ALTERNATING LAYERS OF CRYSTALLINE SI AND POROUS AMORPHOUS SI1-XGEX ALLOYS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1518-1520
ENERGY-FILTERED MICRODIFFRACTION IN A DEDICATED SCANNING-TRANSMISSIONELECTRON-MICROSCOPE
Authors: PIKE WT
Citation: Wt. Pike, ENERGY-FILTERED MICRODIFFRACTION IN A DEDICATED SCANNING-TRANSMISSIONELECTRON-MICROSCOPE, Ultramicroscopy, 51(1-4), 1993, pp. 117-127
GAN ALN DIGITAL ALLOY SHORT-PERIOD SUPERLATTICES BY SWITCHED ATOMIC LAYER METALORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: KHAN MA KUZNIA JN OLSON DT GEORGE T PIKE WT
Citation: Ma. Khan et al., GAN ALN DIGITAL ALLOY SHORT-PERIOD SUPERLATTICES BY SWITCHED ATOMIC LAYER METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 63(25), 1993, pp. 3470-3472
VISIBLE PHOTOLUMINESCENCE OF POROUS SI1-XGEX OBTAINED BY STAIN ETCHING
Authors: KSENDZOV A FATHAUER RW GEORGE T PIKE WT VASQUEZ RP TAYLOR AP
Citation: A. Ksendzov et al., VISIBLE PHOTOLUMINESCENCE OF POROUS SI1-XGEX OBTAINED BY STAIN ETCHING, Applied physics letters, 63(2), 1993, pp. 200-202
Risultati: 1-12 |