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Results:
1-19
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Results: 19
Authors:
NADAZDY V
DURNY R
THURZO I
PINCIK E
Citation: V. Nadazdy et al., NEW EXPERIMENTAL FACTS ON THE STAEBLER-WRONSKI EFFECT, Journal of non-crystalline solids, 230, 1998, pp. 316-319
Authors:
PINCIK E
JERGEL M
KUCERA M
BRUNEL M
Citation: E. Pincik et al., THE INFLUENCE OF THE INDUCTIVELY-COUPLED HYDROGEN PLASMA ON THE GAAS SURFACE-PROPERTIES, Thin solid films, 299(1-2), 1997, pp. 136-142
Authors:
NADAZDY V
DURNY R
PINCIK E
Citation: V. Nadazdy et al., EVIDENCE FOR THE IMPROVED DEFECT-POOL MODEL FOR GAP STATES IN AMORPHOUS-SILICON FROM CHARGE DLTS EXPERIMENTS ON UNDOPED A-SI-H, Physical review letters, 78(6), 1997, pp. 1102-1105
Authors:
THURZO I
PINCIK E
CICMANEC P
Citation: I. Thurzo et al., PROTON IMPLANTATION-INDUCED DAMAGE TO HEAVILY-DOPED N-GAAS AS ENVISAGED BY CHARGE DEEP-LEVEL TRANSIENT SPECTROSCOPY, Physica status solidi. a, Applied research, 162(2), 1997, pp. 547-557
Authors:
PINCIK E
GMUCOVA K
BARTOS J
KUCERA M
JERGEL M
BRUNNER R
Citation: E. Pincik et al., PLASMA ANODIC-OXIDATION OF SEMIINSULATING GAAS, Applied surface science, 93(2), 1996, pp. 119-130
Authors:
PINCIK E
KOCANDA J
BARTOS J
NADAZDY V
JERGEL M
Citation: E. Pincik et al., ANOMALY IN THE GROWTH-RATE OF ANODIC OXIDE-FILMS DUE TO THE PRESENCE OF A (SM+SM2O3) OVERLAYER AT A GAAS SURFACE, Thin solid films, 272(1), 1996, pp. 21-28
Authors:
ADAM R
BENACKA S
CHROMIK S
DARULA M
STRBIK V
GAZI S
KOSTIC I
PINCIK E
Citation: R. Adam et al., YBA2CU3O7-X STEP-EDGE JUNCTIONS PREPARED ON SAPPHIRE SUBSTRATES WITH YSZ BUFFER LAYER, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 2774-2777
Authors:
THURZO I
PINCIK E
PAPAIOANNOU G
DIMITRAKIS P
ARPATZANIS N
Citation: I. Thurzo et al., EXPERIMENTAL-STUDY OF PASSIVATING ION-BEAM-INDUCED DISTRIBUTED ENERGY-LEVELS IN N-GAAS BY HYDROGEN SPECIES FROM BOILING WATER, Applied surface science, 90(1), 1995, pp. 39-45
Authors:
BARANCOK D
CIRAK J
LIDAY J
PINCIK E
TOMCIK P
Citation: D. Barancok et al., THE EFFECT OF THE SEMICONDUCTOR SURFACE-TREATMENT ON LB FILM SI INTERFACE/, Physica status solidi. a, Applied research, 147(2), 1995, pp. 87-90
Authors:
PINCIK E
THURZO I
NADAZDY V
BARTOS J
JERGEL M
KOCANDA J
Citation: E. Pincik et al., FORMATION OF ANODIC PLASMA OXIDES ON INP, GAAS AND SI THROUGH AL AND SM OVERLAYERS, Applied surface science, 78(3), 1994, pp. 239-248
Authors:
THURZO I
PINCIK E
Citation: I. Thurzo et E. Pincik, EXCESS CAPACITANCE OF AL N-GAAS SCHOTTKY DIODES PREPARED ON AR-(AR+H)-ION-BEAM-ETCHED SURFACES/, Applied surface science, 74(2), 1994, pp. 135-145
Authors:
PINCIK E
LANYI S
NADAZDY V
Citation: E. Pincik et al., ON THE INFLUENCE OF AN ULTRATHIN AL OVERLAYER ON GAAS PLASMA OXIDE-GROWTH KINETICS, Thin solid films, 249(1), 1994, pp. 44-49
Authors:
BARTOS J
PINCIK E
Citation: J. Bartos et E. Pincik, LOW-TEMPERATURE PLASMA ANODIC-OXIDATION OF SILICON THROUGH THIN ALUMINUM OVERLAYERS, Thin solid films, 247(2), 1994, pp. 178-183
Authors:
IVANCO J
THURZO I
PINCIK E
Citation: J. Ivanco et al., INFLUENCE OF PLASMA ON SILICON SURFACE DURING LOW-ENERGY PLASMA DEPOSITION PROCESS - THE COMPARATIVE-STUDY ON SI3N4 SI STRUCTURES/, Applied physics letters, 65(20), 1994, pp. 2594-2596
Authors:
IVANCO J
BALVINSKY OE
THURZO I
BARTOS J
PINCIK E
Citation: J. Ivanco et al., ON THE ACCUMULATION CAPACITANCE OF SI3N-4 SI/GAAS STRUCTURES FABRICATED IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA/, Applied surface science, 72(1), 1993, pp. 31-37
Authors:
THURZO I
HRUBCIN L
BARTOS J
PINCIK E
Citation: I. Thurzo et al., CURRENT-VOLTAGE CHARACTERISTICS AND CHARGE DLTS SPECTRA OF PROTON-BOMBARDED SCHOTTKY DIODES ON SEMIINSULATING GAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 83(1-2), 1993, pp. 145-152
Authors:
BARTOS J
PINCIK E
THURZO I
BALVINSKIJ OE
IVANCO J
Citation: J. Bartos et al., AN INTERPRETATION OF DLTS SPECTRA OF AL SI3N4/ULTRATHIN SI/GAAS STRUCTURES - EFFECT OF QUANTUM-WELL OR INTERFACE STATES/, Czechoslovak journal of Physics, 43(9-10), 1993, pp. 875-879
Authors:
PINCIK E
NADAZDY V
WOLCYRZ M
KOCANDA J
JERGEL M
LANYI S
Citation: E. Pincik et al., NEW APPROACH TO THE PREPARATION OF GAAS OXIDE-FILMS UTILIZING AN ULTRATHIN SM OVERLAYER, Czechoslovak journal of Physics, 43(9-10), 1993, pp. 997-1001
Authors:
THURZO I
PINCIK E
HARMATHA L
Citation: I. Thurzo et al., TRANSIENT CHARGING OF MIS DIODES PREPARED BY AL OVERLAYER INDUCED PLASMA OXIDATION OF INP, Semiconductor science and technology, 7(3), 1992, pp. 418-422
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