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Results: 1-9 |
Results: 9
EFFECT OF GROWTH-CONDITIONS ON SURFACE ROUGHENING OF RELAXED INGAAS ON GAAS
Authors: PINNINGTON T LAVOIE C TIEDJE T
Citation: T. Pinnington et al., EFFECT OF GROWTH-CONDITIONS ON SURFACE ROUGHENING OF RELAXED INGAAS ON GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1265-1269
ELIMINATION OF LOW-FREQUENCY GAIN IN INALAS INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS BY SILICON NITRIDE-PASSIVATION/
Authors: DECORBY RG MACDONALD RI BEAUDOIN M PINNINGTON T TIEDJE T GOUIN F
Citation: Rg. Decorby et al., ELIMINATION OF LOW-FREQUENCY GAIN IN INALAS INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS BY SILICON NITRIDE-PASSIVATION/, Journal of electronic materials, 26(12), 1997, pp. 25-28
IN-SITU THICKNESS MEASUREMENTS IN MOLECULAR-BEAM EPITAXY USING ALPHA-PARTICLE ENERGY-LOSS
Authors: BEAUDOIN M GELBART Z GIESSEN U KELSON I LEVY Y MACKENZIE JA PINNINGTON T RITCHIE S THORPE AJS STREATER R TIEDJE T
Citation: M. Beaudoin et al., IN-SITU THICKNESS MEASUREMENTS IN MOLECULAR-BEAM EPITAXY USING ALPHA-PARTICLE ENERGY-LOSS, Surface & coatings technology, 94-5(1-3), 1997, pp. 374-378
SURFACE-MORPHOLOGY DYNAMICS IN STRAINED EPITAXIAL INGAAS
Authors: PINNINGTON T LAVOIE C TIEDJE T HAVEMAN B NODWELL E
Citation: T. Pinnington et al., SURFACE-MORPHOLOGY DYNAMICS IN STRAINED EPITAXIAL INGAAS, Physical review letters, 79(9), 1997, pp. 1698-1701
THE APPLICABILITY OF IMPLANTED ALPHA-SOURCES TO THICKNESS AND STOICHIOMETRY MEASUREMENTS OF THIN-FILMS
Authors: KELSON I LEVY Y RACAH D REDMARD E BEAUDOIN M PINNINGTON T TIEDJE T GIESEN U
Citation: I. Kelson et al., THE APPLICABILITY OF IMPLANTED ALPHA-SOURCES TO THICKNESS AND STOICHIOMETRY MEASUREMENTS OF THIN-FILMS, Journal of physics. D, Applied physics, 30(1), 1997, pp. 131-136
IN-SITU DETECTION OF MISFIT DISLOCATIONS BY LIGHT-SCATTERING
Authors: KAVANAGH KL GOLDMAN RS LAVOIE C LEDUC B PINNINGTON T TIEDJE T KLUG D TSE J
Citation: Kl. Kavanagh et al., IN-SITU DETECTION OF MISFIT DISLOCATIONS BY LIGHT-SCATTERING, Journal of crystal growth, 174(1-4), 1997, pp. 550-557
INDIUM-INDUCED SMOOTHING OF GAAS FILMS DURING MBE GROWTH
Authors: LAVOIE C PINNINGTON T TIEDJE T HUTTER JL SOERENSEN G STREATER R
Citation: C. Lavoie et al., INDIUM-INDUCED SMOOTHING OF GAAS FILMS DURING MBE GROWTH, Canadian journal of physics, 74, 1996, pp. 49-53
RELATIONSHIP BETWEEN SURFACE-MORPHOLOGY AND STRAIN RELAXATION DURING GROWTH OF INGAAS STRAINED LAYERS
Authors: LAVOIE C PINNINGTON T NODWELL E TIEDJE T GOLDMAN RS KAVANAGH KL HUTTER JL
Citation: C. Lavoie et al., RELATIONSHIP BETWEEN SURFACE-MORPHOLOGY AND STRAIN RELAXATION DURING GROWTH OF INGAAS STRAINED LAYERS, Applied physics letters, 67(25), 1995, pp. 3744-3746
LIGHT-SCATTERING AND ELECTRON-MICROSCOPY STUDY OF THE SURFACE-MORPHOLOGY OF GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: NISSEN MK LAVOIE C EISEBITT S PINNINGTON T TIEDJE T
Citation: Mk. Nissen et al., LIGHT-SCATTERING AND ELECTRON-MICROSCOPY STUDY OF THE SURFACE-MORPHOLOGY OF GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Scanning microscopy, 8(4), 1994, pp. 935-942
Risultati: 1-9 |