AAAAAA
Results:
1-7
|
Results: 7
Authors:
DALEIDEN J
CZOTSCHER K
HOFFMANN C
KIEFER R
KLUSSMANN S
MULLER S
NUTSCH A
PLETSCHEN W
WEISSER S
TRANKLE G
BRAUNSTEIN J
WEIMANN G
Citation: J. Daleiden et al., SIDEWALL SLOPE CONTROL OF CHEMICALLY ASSISTED ION-BEAM ETCHED STRUCTURES IN INP-BASED MATERIALS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1864-1866
Authors:
MIKULLA M
CHAZAN P
SCHMITT A
MORGOTT S
WETZEL A
WALTHER M
KIEFER R
PLETSCHEN W
BRAUNSTEIN J
WEIMANN G
Citation: M. Mikulla et al., HIGH-BRIGHTNESS TAPERED SEMICONDUCTOR-LASER OSCILLATORS AND AMPLIFIERS WITH LOW-MODAL GAIN EPILAYER-STRUCTURES, IEEE photonics technology letters, 10(5), 1998, pp. 654-656
Authors:
CHERTOUK M
BURKNER S
BACHEM K
PLETSCHEN W
KRAUS S
BRAUNSTEIN J
TRANKLE G
Citation: M. Chertouk et al., ADVANTAGES OF AL-FREE GAINP INGAAS PHEMTS FOR POWER APPLICATIONS/, Electronics Letters, 34(6), 1998, pp. 590-592
Authors:
FUCHS F
WEIMER U
PLETSCHEN W
SCHMITZ J
AHLSWEDE E
WALTHER M
WAGNER J
KOIDL P
Citation: F. Fuchs et al., HIGH-PERFORMANCE INAS GA1-XINXSB SUPERLATTICE INFRARED PHOTODIODES/, Applied physics letters, 71(22), 1997, pp. 3251-3253
Authors:
NIEBUHR R
BACHEM K
DOMBROWSKI K
MAIER M
PLETSCHEN W
KAUFMANN U
Citation: R. Niebuhr et al., BASIC STUDIES OF GALLIUM NITRIDE GROWTH ON SAPPHIRE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND OPTICAL-PROPERTIES OF DEPOSITED LAYERS, Journal of electronic materials, 24(11), 1995, pp. 1531-1534
Authors:
PLETSCHEN W
BACHEM KH
TASKER PJ
WINKLER K
Citation: W. Pletschen et al., ALGAINP GAINAS/GAAS MODFET DEVICES - CANDIDATES FOR OPTOELECTRONIC INTEGRATED-CIRCUITS/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 304-306
Authors:
LEIER H
MARTEN A
BACHEM KH
PLETSCHEN W
TASKER P
Citation: H. Leier et al., HIGH-SPEED SELF-ALIGNED GAINP GAAS HBBTS, Electronics Letters, 29(10), 1993, pp. 868-870
Risultati:
1-7
|