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Results:
1-12
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Results: 12
Authors:
BURIAN E
POGANY D
LALINSKY T
SELIGER N
GORNIK E
Citation: E. Burian et al., THERMAL SIMULATION AND CHARACTERIZATION OF GAAS MICROMACHINED POWER-SENSOR MICROSYSTEMS, Sensors and actuators. A, Physical, 68(1-3), 1998, pp. 372-377
Authors:
POGANY D
SELIGER N
LALINSKY T
KUZMIK J
HABAS P
HRKUT P
GORNIK E
Citation: D. Pogany et al., STUDY OF THERMAL EFFECTS IN GAAS MICROMACHINED POWER SENSOR MICROSYSTEMS BY AN OPTICAL INTERFEROMETER TECHNIQUE, Microelectronics, 29(4-5), 1998, pp. 191-198
Authors:
POGANY D
SELIGER N
GORNIK E
STOISIEK M
LALINSKY T
Citation: D. Pogany et al., ANALYSIS OF THE TEMPERATURE EVOLUTION FROM THE TIME-RESOLVED THERMOOPTICAL INTERFEROMETRIC MEASUREMENTS WITH FEW FABRY-PEROT PEAKS, Journal of applied physics, 84(8), 1998, pp. 4495-4501
Authors:
SELIGER N
HABAS P
POGANY D
GORNIK E
Citation: N. Seliger et al., TIME-RESOLVED ANALYSIS OF SELF-HEATING IN POWER VDMOSFETS USING BACKSIDE LASERPROBING, Solid-state electronics, 41(9), 1997, pp. 1285-1292
Authors:
POGANY D
GUILLOT G
Citation: D. Pogany et G. Guillot, NORMAL AND ANOMALOUS BEHAVIOR OF THE RTS NOISE AMPLITUDE IN FORWARD-BIASED INGAAS INP PHOTODIODES/, Solid-state electronics, 41(4), 1997, pp. 547-551
Authors:
SELIGER N
POGANY D
FURBOCK C
HABAS P
GORNIK E
STOISIEK M
Citation: N. Seliger et al., A LASER-BEAM METHOD FOR EVALUATION OF THERMAL TIME CONSTANT IN SMART POWER DEVICES, Microelectronics and reliability, 37(10-11), 1997, pp. 1727-1730
Authors:
MOUNIB A
GHIBAUDO G
BALESTRA F
POGANY D
CHANTRE A
CHROBOCZEK J
Citation: A. Mounib et al., LOW-FREQUENCY (1 F) NOISE MODEL FOR THE BASE CURRENT IN POLYSILICON EMITTER BIPOLAR JUNCTION TRANSISTORS/, Journal of applied physics, 79(6), 1996, pp. 3330-3336
Authors:
POGANY D
CHANTRE A
CHROBOCZEK JA
GHIBAUDO G
Citation: D. Pogany et al., ORIGIN OF LARGE-AMPLITUDE RANDOM TELEGRAPH SIGNAL IN SILICON BIPOLAR JUNCTION TRANSISTORS AFTER HOT-CARRIER DEGRADATION, Applied physics letters, 68(4), 1996, pp. 541-543
Authors:
POGANY D
CHROBOCZEK JA
Citation: D. Pogany et Ja. Chroboczek, STUDY OF RTS NOISE IN DEGRADED SUBMICRON POLYSILICON-EMITTER BIPOLAR-TRANSISTORS, Microelectronic engineering, 28(1-4), 1995, pp. 83-86
Authors:
POGANY D
ABABOU S
GUILLOT G
HUGON X
VILOTITCH B
LENOBLE C
Citation: D. Pogany et al., STUDY OF RTS NOISE AND EXCESS CURRENTS IN LATTICE-MISMATCHED INP INGAAS/INP PHOTODETECTOR ARRAYS/, Solid-state electronics, 38(1), 1995, pp. 37-49
Authors:
POGANY D
ABABOU S
GUILLOT G
LOUIS P
Citation: D. Pogany et al., DISCRETE CURRENT FLUCTUATIONS IN INP MIS STRUCTURES DUE TO DEFECTS CREATED BY BREAKDOWN DEGRADATION IN INP NATIVE-OXIDE, Microelectronic engineering, 22(1-4), 1993, pp. 119-122
Authors:
POGANY D
ABABOU S
GUILLOT G
LOUIS P
Citation: D. Pogany et al., STUDY OF DISCRETE CURRENT FLUCTUATIONS IN THE METAL INP NATIVE-OXIDE INP STRUCTURES, Physica status solidi. a, Applied research, 136(2), 1993, pp. 131-134
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