STUDY OF RTS NOISE IN DEGRADED SUBMICRON POLYSILICON-EMITTER BIPOLAR-TRANSISTORS

Authors
POGANY D CHROBOCZEK JA
Citation
D. Pogany et Ja. Chroboczek, STUDY OF RTS NOISE IN DEGRADED SUBMICRON POLYSILICON-EMITTER BIPOLAR-TRANSISTORS, Microelectronic engineering, 28(1-4), 1995, pp. 83-86
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
83 - 86
Database
ISI
SICI code
0167-9317(1995)28:1-4<83:SORNID>2.0.ZU;2-3
Abstract
The random telegraph signal (RTS) noise is studied in the time domain on submicron area CMOS-compatible bipolar junction transistors after h ot carrier stressing. The degradation, recovery and noise properties o f the devices are discussed in terms of defect states located at/near the Si/SiO2 interface under the oxide spacer.