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Authors: MII Y RISHTON S TAUR Y KERN D LII T LEE K JENKINS KA QUINLAN D BROWN T DANNER D SEWELL F POLCARI M
Citation: Y. Mii et al., EXPERIMENTAL HIGH-PERFORMANCE SUB-0.1-MU-M CHANNEL NMOSFETS, IEEE electron device letters, 15(1), 1994, pp. 28-30

Authors: RISHTON SA MII YJ KERN DP TAUR Y LEE KY LII T JENKINS K QUINLAN D BROWN T DANNER D SEWELL F POLCARI M
Citation: Sa. Rishton et al., HIGH-PERFORMANCE SUB-0.1 MU-M SILICON N-METAL OXIDE SEMICONDUCTOR TRANSISTORS WITH COMPOSITE METAL POLYSILICON GATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2612-2614
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