Authors:
RISHTON SA
MII YJ
KERN DP
TAUR Y
LEE KY
LII T
JENKINS K
QUINLAN D
BROWN T
DANNER D
SEWELL F
POLCARI M
Citation: Sa. Rishton et al., HIGH-PERFORMANCE SUB-0.1 MU-M SILICON N-METAL OXIDE SEMICONDUCTOR TRANSISTORS WITH COMPOSITE METAL POLYSILICON GATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2612-2614